Damage induced in Si by ion milling or reactive ion etching

Surface damage in Si substrates created by Ar-ion milling or by reactive-ion etching in CF4, CHF3, Cl2, SiCl4, or SiF4 has been investigated. Metal-oxide-semiconductor capacitors were fabricated on the etched Si substrates, and the interface-state densities were obtained from capacitance-voltage mea...

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Veröffentlicht in:	Journal of applied physics 1983-06, Vol.54 (6), p.3272-3277
Hauptverfasser:	PANG, S. W, RATHMAN, D. D, SILVERSMITH, D. J, MOUNTAIN, R. W, DEGRAFF, P. D
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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