Carrier transport in double-heterostructure active layers
Use of the diffusion equation (with an effective coefficient De) for describing carrier diffusion and drift parallel to the junction in the active layer of a semiconductor double-heterostructure is justified under commonly encountered conditions, and the effective De is evaluated. This equation is b...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1982-11, Vol.53 (11), p.7235-7239 |
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| container_end_page | 7239 |
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| container_issue | 11 |
| container_start_page | 7235 |
| container_title | J. Appl. Phys.; (United States) |
| container_volume | 53 |
| creator | Joyce, W. B. |
| description | Use of the diffusion equation (with an effective coefficient De) for describing carrier diffusion and drift parallel to the junction in the active layer of a semiconductor double-heterostructure is justified under commonly encountered conditions, and the effective De is evaluated. This equation is basic to the description of any laser or light emitting diode phenomenon where the injected carrier density is nonuniform. UFoff |
| doi_str_mv | 10.1063/1.331621 |
| format | Article |
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B.</creator><creatorcontrib>Joyce, W. B. ; Bell Laboratories, Murray Hill, New Jersey 07974</creatorcontrib><description>Use of the diffusion equation (with an effective coefficient De) for describing carrier diffusion and drift parallel to the junction in the active layer of a semiconductor double-heterostructure is justified under commonly encountered conditions, and the effective De is evaluated. This equation is basic to the description of any laser or light emitting diode phenomenon where the injected carrier density is nonuniform. 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Phys.; (United States)</title><description>Use of the diffusion equation (with an effective coefficient De) for describing carrier diffusion and drift parallel to the junction in the active layer of a semiconductor double-heterostructure is justified under commonly encountered conditions, and the effective De is evaluated. This equation is basic to the description of any laser or light emitting diode phenomenon where the injected carrier density is nonuniform. UFoff</description><subject>CARRIER MOBILITY</subject><subject>CHARGE CARRIERS</subject><subject>DIFFUSION</subject><subject>ENGINEERING</subject><subject>EQUATIONS</subject><subject>HETEROJUNCTIONS</subject><subject>JUNCTIONS</subject><subject>LASERS</subject><subject>LAYERS</subject><subject>LIGHT EMITTING DIODES</subject><subject>MATHEMATICAL MODELS</subject><subject>MOBILITY</subject><subject>ORIENTATION</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SEMICONDUCTOR DIODES</subject><subject>SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989)</subject><subject>SEMICONDUCTOR LASERS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNotkM1Kw0AURgdRsFbBRwiu3KTem5vM5C4l-AcFN7oeJpM7NFKTMjMV-vZW6urbHD4OR6lbhBWCpgdcEaGu8EwtEFouTdPAuVoAVFi2bPhSXaX0BYDYEi8Udy7GUWKRo5vSbo65GKdimPf9VsqNZIlzynHv8z5K4Xwef6TYuoPEdK0ugtsmufnfpfp8fvroXsv1-8tb97guPWGby7qqDAXDA9TcVkx1T6EPbDSSwzoMjeMgUJugWbtWQs-khx489Mw61EBLdXf6PYqMNvkxi9_4eZrEZ6sNATfmCN2fIH_0TVGC3cXx28WDRbB_XSzaUxf6BQRiVDg</recordid><startdate>19821101</startdate><enddate>19821101</enddate><creator>Joyce, W. B.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19821101</creationdate><title>Carrier transport in double-heterostructure active layers</title><author>Joyce, W. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c318t-42273f79d04982934b3fbf97613a14fd5a9fe047f696a8efb936db0c0b996f403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><topic>CARRIER MOBILITY</topic><topic>CHARGE CARRIERS</topic><topic>DIFFUSION</topic><topic>ENGINEERING</topic><topic>EQUATIONS</topic><topic>HETEROJUNCTIONS</topic><topic>JUNCTIONS</topic><topic>LASERS</topic><topic>LAYERS</topic><topic>LIGHT EMITTING DIODES</topic><topic>MATHEMATICAL MODELS</topic><topic>MOBILITY</topic><topic>ORIENTATION</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SEMICONDUCTOR DIODES</topic><topic>SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989)</topic><topic>SEMICONDUCTOR LASERS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Joyce, W. B.</creatorcontrib><creatorcontrib>Bell Laboratories, Murray Hill, New Jersey 07974</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Joyce, W. B.</au><aucorp>Bell Laboratories, Murray Hill, New Jersey 07974</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier transport in double-heterostructure active layers</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1982-11-01</date><risdate>1982</risdate><volume>53</volume><issue>11</issue><spage>7235</spage><epage>7239</epage><pages>7235-7239</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Use of the diffusion equation (with an effective coefficient De) for describing carrier diffusion and drift parallel to the junction in the active layer of a semiconductor double-heterostructure is justified under commonly encountered conditions, and the effective De is evaluated. This equation is basic to the description of any laser or light emitting diode phenomenon where the injected carrier density is nonuniform. UFoff</abstract><cop>United States</cop><doi>10.1063/1.331621</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | J. Appl. Phys.; (United States), 1982-11, Vol.53 (11), p.7235-7239 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_331621 |
| source | AIP Digital Archive |
| subjects | CARRIER MOBILITY CHARGE CARRIERS DIFFUSION ENGINEERING EQUATIONS HETEROJUNCTIONS JUNCTIONS LASERS LAYERS LIGHT EMITTING DIODES MATHEMATICAL MODELS MOBILITY ORIENTATION SEMICONDUCTOR DEVICES SEMICONDUCTOR DIODES SEMICONDUCTOR JUNCTIONS 420300 -- Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS |
| title | Carrier transport in double-heterostructure active layers |
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