Carrier transport in double-heterostructure active layers

Carrier transport in double-heterostructure active layers

Use of the diffusion equation (with an effective coefficient De) for describing carrier diffusion and drift parallel to the junction in the active layer of a semiconductor double-heterostructure is justified under commonly encountered conditions, and the effective De is evaluated. This equation is b...

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Bibliographische Detailangaben
Veröffentlicht in:J. Appl. Phys.; (United States) 1982-11, Vol.53 (11), p.7235-7239
1. Verfasser: Joyce, W. B.
Format: Artikel
Sprache:eng
Schlagworte:
CARRIER MOBILITY
CHARGE CARRIERS
DIFFUSION
ENGINEERING
EQUATIONS
HETEROJUNCTIONS
JUNCTIONS
LASERS
LAYERS
LIGHT EMITTING DIODES
MATHEMATICAL MODELS
MOBILITY
ORIENTATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS 420300 > Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
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Beschreibung
Zusammenfassung:Use of the diffusion equation (with an effective coefficient De) for describing carrier diffusion and drift parallel to the junction in the active layer of a semiconductor double-heterostructure is justified under commonly encountered conditions, and the effective De is evaluated. This equation is basic to the description of any laser or light emitting diode phenomenon where the injected carrier density is nonuniform. UFoff
ISSN:0021-8979
1089-7550
DOI:10.1063/1.331621