High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators
Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a co polymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators for fabricating organic thin-film transistors....
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| Veröffentlicht in: | Applied physics letters 2010-03, Vol.96 (10), p.103307-103307-3 |
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| container_end_page | 103307-3 |
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| container_title | Applied physics letters |
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| creator | Kim, Youn Sun Jung, Ki Hwa Lee, U Ra Kim, Kyung Hwan Hoang, Mai Ha Jin, Jung-Il Choi, Dong Hoon |
| description | Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a co
polymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators
for fabricating organic thin-film transistors. An organic semiconductor (
5
,
5
′
-(9,10-bis((4-hexylphenyl)ethynyl)anthracene-2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e.,
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| doi_str_mv | 10.1063/1.3299022 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3299022</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c284t-f0f0772ec941f5af23daeadfee8e47d3b19ce93ea8bf91767dcd88b533a7b703</originalsourceid><addsrcrecordid>eNp1kM1KAzEYRYMoWKsL3yBbF1Pz02kmG6HUnwpFN91K-CbzpY1MJyWJSt_eGVqXri4XDpfLIeSWswlnM3nPJ1JozYQ4IyPOlCok59U5GTHGZDHTJb8kVyl99rUUUo7Ix9JvtsUu1L71-UBrH4oQN9B5S53HtqHoHNpMc4Qu-ZRDTPTH5y3db0NfEGz230gf3-aJQqIbyEh9l75aGNBrcuGgTXhzyjFZPz-tF8ti9f7yupivCiuqaS4cc_1VgVZPuSvBCdkAQuMQK5yqRtZcW9QSoaqd5mqmGttUVV1KCapWTI7J3XHWxpBSRGf20e8gHgxnZtBiuDlp6dmHI5usz5B96P6HBzfmz43p3ZgQ5S_dEmy3</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Kim, Youn Sun ; Jung, Ki Hwa ; Lee, U Ra ; Kim, Kyung Hwan ; Hoang, Mai Ha ; Jin, Jung-Il ; Choi, Dong Hoon</creator><creatorcontrib>Kim, Youn Sun ; Jung, Ki Hwa ; Lee, U Ra ; Kim, Kyung Hwan ; Hoang, Mai Ha ; Jin, Jung-Il ; Choi, Dong Hoon</creatorcontrib><description>Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a co
polymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators
for fabricating organic thin-film transistors. An organic semiconductor (
5
,
5
′
-(9,10-bis((4-hexylphenyl)ethynyl)anthracene-2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e.,
0.31
cm
2
V
−
1
s
−
1
(
I
on
/
I
off
=
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.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3299022</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-03, Vol.96 (10), p.103307-103307-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c284t-f0f0772ec941f5af23daeadfee8e47d3b19ce93ea8bf91767dcd88b533a7b703</citedby><cites>FETCH-LOGICAL-c284t-f0f0772ec941f5af23daeadfee8e47d3b19ce93ea8bf91767dcd88b533a7b703</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3299022$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,781,785,795,1560,4513,27928,27929,76388,76394</link.rule.ids></links><search><creatorcontrib>Kim, Youn Sun</creatorcontrib><creatorcontrib>Jung, Ki Hwa</creatorcontrib><creatorcontrib>Lee, U Ra</creatorcontrib><creatorcontrib>Kim, Kyung Hwan</creatorcontrib><creatorcontrib>Hoang, Mai Ha</creatorcontrib><creatorcontrib>Jin, Jung-Il</creatorcontrib><creatorcontrib>Choi, Dong Hoon</creatorcontrib><title>High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators</title><title>Applied physics letters</title><description>Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a co
polymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators
for fabricating organic thin-film transistors. An organic semiconductor (
5
,
5
′
-(9,10-bis((4-hexylphenyl)ethynyl)anthracene-2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e.,
0.31
cm
2
V
−
1
s
−
1
(
I
on
/
I
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=
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.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KAzEYRYMoWKsL3yBbF1Pz02kmG6HUnwpFN91K-CbzpY1MJyWJSt_eGVqXri4XDpfLIeSWswlnM3nPJ1JozYQ4IyPOlCok59U5GTHGZDHTJb8kVyl99rUUUo7Ix9JvtsUu1L71-UBrH4oQN9B5S53HtqHoHNpMc4Qu-ZRDTPTH5y3db0NfEGz230gf3-aJQqIbyEh9l75aGNBrcuGgTXhzyjFZPz-tF8ti9f7yupivCiuqaS4cc_1VgVZPuSvBCdkAQuMQK5yqRtZcW9QSoaqd5mqmGttUVV1KCapWTI7J3XHWxpBSRGf20e8gHgxnZtBiuDlp6dmHI5usz5B96P6HBzfmz43p3ZgQ5S_dEmy3</recordid><startdate>20100308</startdate><enddate>20100308</enddate><creator>Kim, Youn Sun</creator><creator>Jung, Ki Hwa</creator><creator>Lee, U Ra</creator><creator>Kim, Kyung Hwan</creator><creator>Hoang, Mai Ha</creator><creator>Jin, Jung-Il</creator><creator>Choi, Dong Hoon</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100308</creationdate><title>High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators</title><author>Kim, Youn Sun ; Jung, Ki Hwa ; Lee, U Ra ; Kim, Kyung Hwan ; Hoang, Mai Ha ; Jin, Jung-Il ; Choi, Dong Hoon</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c284t-f0f0772ec941f5af23daeadfee8e47d3b19ce93ea8bf91767dcd88b533a7b703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Youn Sun</creatorcontrib><creatorcontrib>Jung, Ki Hwa</creatorcontrib><creatorcontrib>Lee, U Ra</creatorcontrib><creatorcontrib>Kim, Kyung Hwan</creatorcontrib><creatorcontrib>Hoang, Mai Ha</creatorcontrib><creatorcontrib>Jin, Jung-Il</creatorcontrib><creatorcontrib>Choi, Dong Hoon</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Youn Sun</au><au>Jung, Ki Hwa</au><au>Lee, U Ra</au><au>Kim, Kyung Hwan</au><au>Hoang, Mai Ha</au><au>Jin, Jung-Il</au><au>Choi, Dong Hoon</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators</atitle><jtitle>Applied physics letters</jtitle><date>2010-03-08</date><risdate>2010</risdate><volume>96</volume><issue>10</issue><spage>103307</spage><epage>103307-3</epage><pages>103307-103307-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Organic-soluble DNAs bearing chalcone moieties were synthesized by using purified natural sodium DNA. In addition to the chalcone-containing DNA homopolymer (CcDNA), a co
polymer (CTMADNA-co-CcDNA) was synthesized. They were employed as gate insulators
for fabricating organic thin-film transistors. An organic semiconductor (
5
,
5
′
-(9,10-bis((4-hexylphenyl)ethynyl)anthracene-2,6-yl-diyl)bis(ethyne-2,1-diyl)bis(2-hexylthiophene; HB-ant-THT) was deposited on the photocrosslinked DNA-based gate insulators via a solution process. Interestingly, the resulting TFT devices had extremely high field-effect mobilities, and their corresponding transfer curves indicated low hysteresis. The carrier mobility of the device with HB-ant-THT deposited on the CTMADNA-co-CcDNA gate insulator was the best, i.e.,
0.31
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.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3299022</doi></addata></record> |
| fulltext | fulltext |
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| ispartof | Applied physics letters, 2010-03, Vol.96 (10), p.103307-103307-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | High-mobility bio-organic field effect transistors with photoreactive DNAs as gate insulators |
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