The effect of chemical surface treatments on non-native (Bi2O3) GaAs metal-insulator-semiconductor solar cells
GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi2O3 interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi2O3 showed a substantial improveme...
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| Veröffentlicht in: | J. Appl. Phys.; (United States) 1981-07, Vol.52 (7), p.4818-4820 |
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| container_title | J. Appl. Phys.; (United States) |
| container_volume | 52 |
| creator | Wang, Edward Y. Pandelišev, Kiril A. |
| description | GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi2O3 interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi2O3 showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ’’textured’’ surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes. |
| doi_str_mv | 10.1063/1.329323 |
| format | Article |
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The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi2O3 showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ’’textured’’ surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.329323</identifier><language>eng</language><publisher>United States</publisher><subject>140501 - Solar Energy Conversion- Photovoltaic Conversion ; ARSENIC COMPOUNDS ; ARSENIDES ; BEAMS ; BISMUTH COMPOUNDS ; BISMUTH OXIDES ; CHALCOGENIDES ; CHEMICAL REACTIONS ; COMPARATIVE EVALUATIONS ; DATA ; DIRECT ENERGY CONVERTERS ; ELECTRICAL EQUIPMENT ; ELECTRICAL INSULATORS ; ELECTRON BEAMS ; ELEMENTS ; ETCHING ; EVAPORATION ; GALLIUM ARSENIDE SOLAR CELLS ; GALLIUM ARSENIDES ; GALLIUM COMPOUNDS ; INFORMATION ; INTERFACES ; LAYERS ; LEPTON BEAMS ; MATERIALS ; MATHEMATICAL MODELS ; METALS ; MIS SOLAR CELLS ; OXIDES ; OXYGEN COMPOUNDS ; PARTICLE BEAMS ; PHASE TRANSFORMATIONS ; PHOTOELECTRIC CELLS ; PHOTOVOLTAIC CELLS ; PNICTIDES ; ROUGHNESS ; SEMICONDUCTOR MATERIALS ; SOLAR CELLS ; SOLAR ENERGY ; SOLAR EQUIPMENT ; SURFACE FINISHING ; SURFACE PROPERTIES ; SURFACE TREATMENTS</subject><ispartof>J. 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Appl. Phys.; (United States)</title><description>GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi2O3 interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi2O3 showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ’’textured’’ surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes.</description><subject>140501 - Solar Energy Conversion- Photovoltaic Conversion</subject><subject>ARSENIC COMPOUNDS</subject><subject>ARSENIDES</subject><subject>BEAMS</subject><subject>BISMUTH COMPOUNDS</subject><subject>BISMUTH OXIDES</subject><subject>CHALCOGENIDES</subject><subject>CHEMICAL REACTIONS</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>DATA</subject><subject>DIRECT ENERGY CONVERTERS</subject><subject>ELECTRICAL EQUIPMENT</subject><subject>ELECTRICAL INSULATORS</subject><subject>ELECTRON BEAMS</subject><subject>ELEMENTS</subject><subject>ETCHING</subject><subject>EVAPORATION</subject><subject>GALLIUM ARSENIDE SOLAR CELLS</subject><subject>GALLIUM ARSENIDES</subject><subject>GALLIUM COMPOUNDS</subject><subject>INFORMATION</subject><subject>INTERFACES</subject><subject>LAYERS</subject><subject>LEPTON BEAMS</subject><subject>MATERIALS</subject><subject>MATHEMATICAL MODELS</subject><subject>METALS</subject><subject>MIS SOLAR CELLS</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>PARTICLE BEAMS</subject><subject>PHASE TRANSFORMATIONS</subject><subject>PHOTOELECTRIC CELLS</subject><subject>PHOTOVOLTAIC CELLS</subject><subject>PNICTIDES</subject><subject>ROUGHNESS</subject><subject>SEMICONDUCTOR MATERIALS</subject><subject>SOLAR CELLS</subject><subject>SOLAR ENERGY</subject><subject>SOLAR EQUIPMENT</subject><subject>SURFACE FINISHING</subject><subject>SURFACE PROPERTIES</subject><subject>SURFACE TREATMENTS</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1981</creationdate><recordtype>article</recordtype><recordid>eNotUM1KAzEYDKJgrYKPEDzVQ2p-ms3mWEutQqGXel7Sb7_Qld1EklTw7d1SD8MwMAwzQ8ij4HPBK_Ui5kpaJdUVmQheW2a05tdkwrkUrLbG3pK7nL84F6JWdkLC_ogUvUcoNHoKRxw6cD3Np-QdIC0JXRkwlExjoCEGFlzpfpDOXju5U89045aZDlhcz7qQT70rMbF8TomhPcGoaI69SxSw7_M9ufGuz_jwz1Py-bber97Zdrf5WC23DKSWhbmaLzRybCsQpnK1Rw1eKDTWOjhoU1cLbySAlUJqp6Ss9KHmB2XOaHWrpuTpkhtz6ZoMXUE4jo3CuLOplDFSmdE0u5ggxZwT-uY7dYNLv43gzfnMRjSXM9UfZkhmYg</recordid><startdate>19810701</startdate><enddate>19810701</enddate><creator>Wang, Edward Y.</creator><creator>Pandelišev, Kiril A.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19810701</creationdate><title>The effect of chemical surface treatments on non-native (Bi2O3) GaAs metal-insulator-semiconductor solar cells</title><author>Wang, Edward Y. ; Pandelišev, Kiril A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-a8045e0ed6c176a8fe5cf13e799acb57864f72cc92125a32265b80b370b37d5d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1981</creationdate><topic>140501 - Solar Energy Conversion- Photovoltaic Conversion</topic><topic>ARSENIC COMPOUNDS</topic><topic>ARSENIDES</topic><topic>BEAMS</topic><topic>BISMUTH COMPOUNDS</topic><topic>BISMUTH OXIDES</topic><topic>CHALCOGENIDES</topic><topic>CHEMICAL REACTIONS</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>DATA</topic><topic>DIRECT ENERGY CONVERTERS</topic><topic>ELECTRICAL EQUIPMENT</topic><topic>ELECTRICAL INSULATORS</topic><topic>ELECTRON BEAMS</topic><topic>ELEMENTS</topic><topic>ETCHING</topic><topic>EVAPORATION</topic><topic>GALLIUM ARSENIDE SOLAR CELLS</topic><topic>GALLIUM ARSENIDES</topic><topic>GALLIUM COMPOUNDS</topic><topic>INFORMATION</topic><topic>INTERFACES</topic><topic>LAYERS</topic><topic>LEPTON BEAMS</topic><topic>MATERIALS</topic><topic>MATHEMATICAL MODELS</topic><topic>METALS</topic><topic>MIS SOLAR CELLS</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>PARTICLE BEAMS</topic><topic>PHASE TRANSFORMATIONS</topic><topic>PHOTOELECTRIC CELLS</topic><topic>PHOTOVOLTAIC CELLS</topic><topic>PNICTIDES</topic><topic>ROUGHNESS</topic><topic>SEMICONDUCTOR MATERIALS</topic><topic>SOLAR CELLS</topic><topic>SOLAR ENERGY</topic><topic>SOLAR EQUIPMENT</topic><topic>SURFACE FINISHING</topic><topic>SURFACE PROPERTIES</topic><topic>SURFACE TREATMENTS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Edward Y.</creatorcontrib><creatorcontrib>Pandelišev, Kiril A.</creatorcontrib><creatorcontrib>Department of Electrical and Computer Engineering, Arizona State University, Tempe, Arizona 85281</creatorcontrib><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>J. Appl. Phys.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Edward Y.</au><au>Pandelišev, Kiril A.</au><aucorp>Department of Electrical and Computer Engineering, Arizona State University, Tempe, Arizona 85281</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of chemical surface treatments on non-native (Bi2O3) GaAs metal-insulator-semiconductor solar cells</atitle><jtitle>J. Appl. Phys.; (United States)</jtitle><date>1981-07-01</date><risdate>1981</risdate><volume>52</volume><issue>7</issue><spage>4818</spage><epage>4820</epage><pages>4818-4820</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>GaAs metal-insulator-semiconductor solar cells with a physically deposited Bi2O3 interfacial layer have been investigated. The deposition techniques used in the study were electron beam and boat thermal evaporation. The cells fabricated with interfacial layers of Bi2O3 showed a substantial improvement in open-circuit voltage over cells made without the physically deposited oxide layer. An etch has been used which yields an irregular ’’textured’’ surface. Cells employing this surface had a higher short-circuit current than those made with smooth, polished surfaces. The open-circuit voltages of these textured cells were lower than those with smooth surfaces. Calculations of the dependence of open-circuit voltage on pinhole density are in agreement with these results since a rough surface has a greater probability of pinholes.</abstract><cop>United States</cop><doi>10.1063/1.329323</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | J. Appl. Phys.; (United States), 1981-07, Vol.52 (7), p.4818-4820 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_329323 |
| source | AIP Digital Archive |
| subjects | 140501 - Solar Energy Conversion- Photovoltaic Conversion ARSENIC COMPOUNDS ARSENIDES BEAMS BISMUTH COMPOUNDS BISMUTH OXIDES CHALCOGENIDES CHEMICAL REACTIONS COMPARATIVE EVALUATIONS DATA DIRECT ENERGY CONVERTERS ELECTRICAL EQUIPMENT ELECTRICAL INSULATORS ELECTRON BEAMS ELEMENTS ETCHING EVAPORATION GALLIUM ARSENIDE SOLAR CELLS GALLIUM ARSENIDES GALLIUM COMPOUNDS INFORMATION INTERFACES LAYERS LEPTON BEAMS MATERIALS MATHEMATICAL MODELS METALS MIS SOLAR CELLS OXIDES OXYGEN COMPOUNDS PARTICLE BEAMS PHASE TRANSFORMATIONS PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS PNICTIDES ROUGHNESS SEMICONDUCTOR MATERIALS SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT SURFACE FINISHING SURFACE PROPERTIES SURFACE TREATMENTS |
| title | The effect of chemical surface treatments on non-native (Bi2O3) GaAs metal-insulator-semiconductor solar cells |
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