Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

Energy band alignment and band gap of Al2O3 and HfAlO films grown by atomic layer deposition on 4H–SiC were determined using x-ray photoelectron spectroscopy. Al2O3 exhibited a symmetric band profile with a conduction band offset (ΔEC) of 1.88 eV and a valence band offset (ΔEV) of 1.87 eV. HfAlO yie...

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Veröffentlicht in:	Applied physics letters 2010-01, Vol.96 (4)
Hauptverfasser:	Suri, Rahul, Kirkpatrick, Casey J., Lichtenwalner, Daniel J., Misra, Veena
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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