Silicon-on-diamond material by pulsed laser technique

We present a method to bond directly silicon and diamond plates to obtain a single silicon-on-diamond material, with a carbon-silicon interface of unprecedented quality. The bonding is performed at room temperature, via picosecond 355 nm pulsed laser irradiation of the silicon-diamond interface, thr...

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Veröffentlicht in:	Applied physics letters 2010-01, Vol.96 (3), p.031901-031901-3
Hauptverfasser:	Lagomarsino, S., Parrini, G., Sciortino, S., Santoro, M., Citroni, M., Vannoni, M., Fossati, A., Gorelli, F., Molesini, G., Scorzoni, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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