Fully inverted single-digit nanometer domains in ferroelectric films

Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density ( > 1   Tbit / in . 2 ) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains...

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Veröffentlicht in:	Applied physics letters 2010-01, Vol.96 (2), p.023103-023103-3
Hauptverfasser:	Tayebi, Noureddine, Narui, Yoshie, Franklin, Nathan, Collier, C. Patrick, Giapis, Konstantinos P., Nishi, Yoshio, Zhang, Yuegang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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