Fully inverted single-digit nanometer domains in ferroelectric films
Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density ( > 1 Tbit / in . 2 ) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains...
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| Veröffentlicht in: | Applied physics letters 2010-01, Vol.96 (2), p.023103-023103-3 |
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| Sprache: | eng |
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| container_end_page | 023103-3 |
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| container_issue | 2 |
| container_start_page | 023103 |
| container_title | Applied physics letters |
| container_volume | 96 |
| creator | Tayebi, Noureddine Narui, Yoshie Franklin, Nathan Collier, C. Patrick Giapis, Konstantinos P. Nishi, Yoshio Zhang, Yuegang |
| description | Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density
(
>
1
Tbit
/
in
.
2
)
probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to
40
Tbit
/
in
.
2
data storage densities. |
| doi_str_mv | 10.1063/1.3280371 |
| format | Article |
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(
>
1
Tbit
/
in
.
2
)
probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to
40
Tbit
/
in
.
2
data storage densities.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3280371</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-01, Vol.96 (2), p.023103-023103-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-e3b693c616b34731508b64dbb3cb2f977d012166d37dff8fcb33d8e3129433523</citedby><cites>FETCH-LOGICAL-c385t-e3b693c616b34731508b64dbb3cb2f977d012166d37dff8fcb33d8e3129433523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3280371$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,777,781,791,1554,4498,27905,27906,76133,76139</link.rule.ids></links><search><creatorcontrib>Tayebi, Noureddine</creatorcontrib><creatorcontrib>Narui, Yoshie</creatorcontrib><creatorcontrib>Franklin, Nathan</creatorcontrib><creatorcontrib>Collier, C. Patrick</creatorcontrib><creatorcontrib>Giapis, Konstantinos P.</creatorcontrib><creatorcontrib>Nishi, Yoshio</creatorcontrib><creatorcontrib>Zhang, Yuegang</creatorcontrib><title>Fully inverted single-digit nanometer domains in ferroelectric films</title><title>Applied physics letters</title><description>Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density
(
>
1
Tbit
/
in
.
2
)
probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to
40
Tbit
/
in
.
2
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(
>
1
Tbit
/
in
.
2
)
probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to
40
Tbit
/
in
.
2
data storage densities.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3280371</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-01, Vol.96 (2), p.023103-023103-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3280371 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Fully inverted single-digit nanometer domains in ferroelectric films |
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