A polarity-controllable graphene inverter

A polarity-controllable graphene inverter

We propose and experimentally demonstrate a functional electron device, which is a polarity-controllable inverter constructed using a four-terminal ambipolar graphene field effect transistor (FET). The FET has two input terminals, both a top gate and a back gate, and the polarity of the FET can be s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2010-01, Vol.96 (1), p.012102-012102-3
Hauptverfasser: Harada, Naoki, Yagi, Katsunori, Sato, Shintaro, Yokoyama, Naoki
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 012102-3
container_issue 1
container_start_page 012102
container_title Applied physics letters
container_volume 96
creator Harada, Naoki
Yagi, Katsunori
Sato, Shintaro
Yokoyama, Naoki
description We propose and experimentally demonstrate a functional electron device, which is a polarity-controllable inverter constructed using a four-terminal ambipolar graphene field effect transistor (FET). The FET has two input terminals, both a top gate and a back gate, and the polarity of the FET can be switched by switching the input to the back gate. The slope of the inverter transfer curves can be changed by changing the back-gate voltage. By adding binary digital data and sinusoidal carrier waves into the back gate and the top gate of the inverter, respectively, the one-transistor binary digital phase modulator can be constructed and operated.
doi_str_mv 10.1063/1.3280042
format Article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3280042</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-c59a001c284ecfdd2e111be4b858dc543cc5c3fb133ac6040be0e0728c4cd2113</originalsourceid><addsrcrecordid>eNp1z09LxDAQh-EgCtbVg9-g1z1knckkbfcilMV_sOBFzyGdplqpbUmCsN_elV29eRoGXn7wCHGNsEIo6AZXpCoArU5EhlCWkhCrU5EBAMlibfBcXMT4sX-NIsrEss7naXChTzvJ05jCNAyuGXz-Ftz87kef9-OXD8mHS3HWuSH6q-NdiNf7u5fNo9w-Pzxt6q1kMpAkm7UDQFaV9ty1rfKI2HjdVKZq2WhiNkxdg0SOC9DQePBQqoo1twqRFmJ52OUwxRh8Z-fQf7qwswj2x2jRHo379vbQRu6TS_00_h_X9hdq_6D0DVr4WL8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A polarity-controllable graphene inverter</title><source>Scitation (American Institute of Physics)</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Harada, Naoki ; Yagi, Katsunori ; Sato, Shintaro ; Yokoyama, Naoki</creator><creatorcontrib>Harada, Naoki ; Yagi, Katsunori ; Sato, Shintaro ; Yokoyama, Naoki</creatorcontrib><description>We propose and experimentally demonstrate a functional electron device, which is a polarity-controllable inverter constructed using a four-terminal ambipolar graphene field effect transistor (FET). The FET has two input terminals, both a top gate and a back gate, and the polarity of the FET can be switched by switching the input to the back gate. The slope of the inverter transfer curves can be changed by changing the back-gate voltage. By adding binary digital data and sinusoidal carrier waves into the back gate and the top gate of the inverter, respectively, the one-transistor binary digital phase modulator can be constructed and operated.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3280042</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-01, Vol.96 (1), p.012102-012102-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-c59a001c284ecfdd2e111be4b858dc543cc5c3fb133ac6040be0e0728c4cd2113</citedby><cites>FETCH-LOGICAL-c350t-c59a001c284ecfdd2e111be4b858dc543cc5c3fb133ac6040be0e0728c4cd2113</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3280042$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76127,76133</link.rule.ids></links><search><creatorcontrib>Harada, Naoki</creatorcontrib><creatorcontrib>Yagi, Katsunori</creatorcontrib><creatorcontrib>Sato, Shintaro</creatorcontrib><creatorcontrib>Yokoyama, Naoki</creatorcontrib><title>A polarity-controllable graphene inverter</title><title>Applied physics letters</title><description>We propose and experimentally demonstrate a functional electron device, which is a polarity-controllable inverter constructed using a four-terminal ambipolar graphene field effect transistor (FET). The FET has two input terminals, both a top gate and a back gate, and the polarity of the FET can be switched by switching the input to the back gate. The slope of the inverter transfer curves can be changed by changing the back-gate voltage. By adding binary digital data and sinusoidal carrier waves into the back gate and the top gate of the inverter, respectively, the one-transistor binary digital phase modulator can be constructed and operated.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1z09LxDAQh-EgCtbVg9-g1z1knckkbfcilMV_sOBFzyGdplqpbUmCsN_elV29eRoGXn7wCHGNsEIo6AZXpCoArU5EhlCWkhCrU5EBAMlibfBcXMT4sX-NIsrEss7naXChTzvJ05jCNAyuGXz-Ftz87kef9-OXD8mHS3HWuSH6q-NdiNf7u5fNo9w-Pzxt6q1kMpAkm7UDQFaV9ty1rfKI2HjdVKZq2WhiNkxdg0SOC9DQePBQqoo1twqRFmJ52OUwxRh8Z-fQf7qwswj2x2jRHo379vbQRu6TS_00_h_X9hdq_6D0DVr4WL8</recordid><startdate>20100104</startdate><enddate>20100104</enddate><creator>Harada, Naoki</creator><creator>Yagi, Katsunori</creator><creator>Sato, Shintaro</creator><creator>Yokoyama, Naoki</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100104</creationdate><title>A polarity-controllable graphene inverter</title><author>Harada, Naoki ; Yagi, Katsunori ; Sato, Shintaro ; Yokoyama, Naoki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-c59a001c284ecfdd2e111be4b858dc543cc5c3fb133ac6040be0e0728c4cd2113</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Harada, Naoki</creatorcontrib><creatorcontrib>Yagi, Katsunori</creatorcontrib><creatorcontrib>Sato, Shintaro</creatorcontrib><creatorcontrib>Yokoyama, Naoki</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Harada, Naoki</au><au>Yagi, Katsunori</au><au>Sato, Shintaro</au><au>Yokoyama, Naoki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A polarity-controllable graphene inverter</atitle><jtitle>Applied physics letters</jtitle><date>2010-01-04</date><risdate>2010</risdate><volume>96</volume><issue>1</issue><spage>012102</spage><epage>012102-3</epage><pages>012102-012102-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We propose and experimentally demonstrate a functional electron device, which is a polarity-controllable inverter constructed using a four-terminal ambipolar graphene field effect transistor (FET). The FET has two input terminals, both a top gate and a back gate, and the polarity of the FET can be switched by switching the input to the back gate. The slope of the inverter transfer curves can be changed by changing the back-gate voltage. By adding binary digital data and sinusoidal carrier waves into the back gate and the top gate of the inverter, respectively, the one-transistor binary digital phase modulator can be constructed and operated.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3280042</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2010-01, Vol.96 (1), p.012102-012102-3
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3280042
source Scitation (American Institute of Physics); AIP Digital Archive; Alma/SFX Local Collection
title A polarity-controllable graphene inverter
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T16%3A01%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20polarity-controllable%20graphene%20inverter&rft.jtitle=Applied%20physics%20letters&rft.au=Harada,%20Naoki&rft.date=2010-01-04&rft.volume=96&rft.issue=1&rft.spage=012102&rft.epage=012102-3&rft.pages=012102-012102-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3280042&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true