The effect of added acetylene on the rf discharge chemistry of C2F6. A mechanistic model for fluorocarbon plasmas
The effect of added acetylene on the rf discharge chemistry of C2F6 was studied as a function of acetylene concentration. The principle products are HF, CF4, CHF3, C2F4, and CF2 as determined by mass spectrometry. Under conditions typically used for etching SiO2, residence time and power density con...
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Veröffentlicht in: | Journal of applied physics 1980-05, Vol.51 (5), p.2909-2913 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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