Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at −172 °C were realized. Emission wavelength changes from 5 μm at −172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wa...

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Veröffentlicht in:Applied physics letters 2009-12, Vol.95 (24)
Hauptverfasser: Rahim, M., Fill, M., Felder, F., Chappuis, D., Corda, M., Zogg, H.
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container_issue 24
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container_title Applied physics letters
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creator Rahim, M.
Fill, M.
Felder, F.
Chappuis, D.
Corda, M.
Zogg, H.
description Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at −172 °C were realized. Emission wavelength changes from 5 μm at −172 °C to 3.6 μm at 20 °C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb1−yEuyTe/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb1−yEuyTe/BaF2 mirror. The VECSEL is optically pumped with 1.55 μm wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.
doi_str_mv 10.1063/1.3275792
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title Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power
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