Fermi-level depinning and hole injection induced two-dimensional electron related radiative emissions from a forward biased Ni/Au-AlGaN/GaN Schottky diode

Electroluminescence (EL) from a forward biased Ni/Au-AlGaN/GaN Schottky diode was observed and studied. According to the EL spectra, which were dominated by the GaN near band edge emissions, holes were injected into the GaN layer. It was found that the turn-on voltage of the EL emission coincided wi...

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Veröffentlicht in:	Applied physics letters 2009-12, Vol.95 (23), p.232111-232111-3
Hauptverfasser:	Li, B. K., Wang, M. J., Chen, K. J., Wang, J. N.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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