Role of photovoltaic effects on characterizing emission properties of InGaN/GaN light emitting diodes

Strong photovoltaic effects on photoluminescence (PL) spectra in InGaN/GaN blue light emitting diodes were investigated. Due to severe carrier escape from quantum wells, significant photovoltaic effects occur in PL measurement in open-circuit condition, which strongly affect the PL peak position and...

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Veröffentlicht in:	Applied physics letters 2009-12, Vol.95 (26)
Hauptverfasser:	Song, Jae-Ho, Kim, Ho-Jong, Ahn, Byung-Jun, Dong, Yanqun, Hong, Sayong, Song, Jung-Hoon, Moon, Youngboo, Yuh, Hwan-Kuk, Choi, Sung-Chul, Shee, Sangkee
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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