Nonvolatile resistive switching in graphene oxide thin films

Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 10 4   s , and switching threshold voltages of less than 1 V. The...

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Veröffentlicht in:	Applied physics letters 2009-12, Vol.95 (23), p.232101-232101-3
Hauptverfasser:	He, C. L., Zhuge, F., Zhou, X. F., Li, M., Zhou, G. C., Liu, Y. W., Wang, J. Z., Chen, B., Su, W. J., Liu, Z. P., Wu, Y. H., Cui, P., Li, Run-Wei
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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