High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes

Spontaneous emission property of an asymmetrically graded 480 nm InGaN/GaN quantum well (QW) is investigated via k ⋅ p theory. Comparing to rectangular QW, band profiles of the graded QW change into parabolalike due to the variation of internal piezoelectric field along the growth direction, and the...

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Veröffentlicht in:	Applied physics letters 2009-11, Vol.95 (21), p.211104-211104-3
Hauptverfasser:	Wang, Lei, Li, Rui, Yang, Ziwen, Li, Ding, Yu, Tao, Liu, Ningyang, Liu, Lei, Chen, Weihua, Hu, Xiaodong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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