Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters

The photoluminescence (PL) of Er-doped silica films containing Ge nanoclusters synthesized by ion implantation was investigated. The area of the 1540 nm Er3+ PL peak was enhanced by up to a factor of 200 by the addition of Ge nanoclusters. The PL enhancement was found to be proportional to the conce...

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Veröffentlicht in:	Applied physics letters 2009-11, Vol.95 (20)
Hauptverfasser:	Guzman, J., Shin, S. J., Liao, C. Y., Yuan, C. W., Stone, P. R., Dubón, O. D., Yu, K. M., Beeman, J. W., Watanabe, M., Ager, J. W., Chrzan, D. C., Haller, E. E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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