Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors

We present a study on suppressing the ambipolar behavior of Schottky barrier metal-oxide-semiconductor field-effect transistors (MOSFET). Inserting a silicon nitride layer of appropriate thickness between the metallic source/drain electrodes and the silicon yields a low Schottky-barrier and simultan...

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Veröffentlicht in:Applied physics letters 2009-11, Vol.95 (21)
Hauptverfasser: Ghoneim, H., Knoch, J., Riel, H., Webb, D., Björk, M. T., Karg, S., Lörtscher, E., Schmid, H., Riess, W.
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Sprache:eng
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Zusammenfassung:We present a study on suppressing the ambipolar behavior of Schottky barrier metal-oxide-semiconductor field-effect transistors (MOSFET). Inserting a silicon nitride layer of appropriate thickness between the metallic source/drain electrodes and the silicon yields a low Schottky-barrier and simultaneously tunes the properties of the contact from metal-semiconductor-like to the behavior of a doped contact. Moreover, device characteristics of pseudo-MOSFETs reveal an efficient suppression of ambipolar behavior. Comparison with an alternative way of achieving low Schottky-barrier contacts, i.e., by inserting a strong dipole layer such as LiF between the metal and the silicon, reveals that the suppression is not a result of shifting the Fermi level closer to the conduction band but is caused by a reduction of metal-induced gap states. The trade-off between suppression of the ambipolar behavior, contact length and on-state current is investigated with simulations.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3266526