Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blue...

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Veröffentlicht in:	Journal of applied physics 2009-12, Vol.106 (11), p.113104-113104-4
Hauptverfasser:	Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., Udwary, K., Preble, E. A., Evans, K. R.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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