Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes

Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comp...

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Veröffentlicht in:Applied physics letters 2009-10, Vol.95 (15), p.151103-151103-3
Hauptverfasser: Charash, R., Maaskant, P. P., Lewis, L., McAleese, C., Kappers, M. J., Humphreys, C. J., Corbett, B.
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container_end_page 151103-3
container_issue 15
container_start_page 151103
container_title Applied physics letters
container_volume 95
creator Charash, R.
Maaskant, P. P.
Lewis, L.
McAleese, C.
Kappers, M. J.
Humphreys, C. J.
Corbett, B.
description Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well.
doi_str_mv 10.1063/1.3244203
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fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3244203</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c350t-670a1ee92bac86eac51d0e57e9dff3a617548fe82b3f4c20fcc7b2700ccc80bd3</originalsourceid><addsrcrecordid>eNp1kEFLwzAUx4MoOKcHv0GuHrq9JG3TXQQpOgdDL-q1pOnLjKTtTFLEb7-O9eDFw-Px_vz4w_sRcstgwSAXS7YQPE05iDMyYyBlIhgrzskMAESSrzJ2Sa5C-BrPjAsxIx-l8t6ip40N0dt6iLbvqO3oplurl-U4dIx173pP28FFu3dIvwfVxaGlP-gcdXb3GSm2Nkbb7caevsFwTS6McgFvpj0n70-Pb-Vzsn1db8qHbaJFBjHJJSiGuOK10kWOSmesAcwkrhpjhMqZzNLCYMFrYVLNwWgtay4BtNYF1I2Yk7tTr_Z9CB5Ntfe2Vf63YlAdhVSsmoSM7P2JDdpGdfzzf3iyUv21Ig5xwmoD</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Charash, R. ; Maaskant, P. P. ; Lewis, L. ; McAleese, C. ; Kappers, M. J. ; Humphreys, C. J. ; Corbett, B.</creator><creatorcontrib>Charash, R. ; Maaskant, P. P. ; Lewis, L. ; McAleese, C. ; Kappers, M. J. ; Humphreys, C. J. ; Corbett, B.</creatorcontrib><description>Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3244203</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-10, Vol.95 (15), p.151103-151103-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-670a1ee92bac86eac51d0e57e9dff3a617548fe82b3f4c20fcc7b2700ccc80bd3</citedby><cites>FETCH-LOGICAL-c350t-670a1ee92bac86eac51d0e57e9dff3a617548fe82b3f4c20fcc7b2700ccc80bd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3244203$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>315,782,786,796,1561,4516,27933,27934,76394,76400</link.rule.ids></links><search><creatorcontrib>Charash, R.</creatorcontrib><creatorcontrib>Maaskant, P. P.</creatorcontrib><creatorcontrib>Lewis, L.</creatorcontrib><creatorcontrib>McAleese, C.</creatorcontrib><creatorcontrib>Kappers, M. J.</creatorcontrib><creatorcontrib>Humphreys, C. J.</creatorcontrib><creatorcontrib>Corbett, B.</creatorcontrib><title>Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes</title><title>Applied physics letters</title><description>Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAUx4MoOKcHv0GuHrq9JG3TXQQpOgdDL-q1pOnLjKTtTFLEb7-O9eDFw-Px_vz4w_sRcstgwSAXS7YQPE05iDMyYyBlIhgrzskMAESSrzJ2Sa5C-BrPjAsxIx-l8t6ip40N0dt6iLbvqO3oplurl-U4dIx173pP28FFu3dIvwfVxaGlP-gcdXb3GSm2Nkbb7caevsFwTS6McgFvpj0n70-Pb-Vzsn1db8qHbaJFBjHJJSiGuOK10kWOSmesAcwkrhpjhMqZzNLCYMFrYVLNwWgtay4BtNYF1I2Yk7tTr_Z9CB5Ntfe2Vf63YlAdhVSsmoSM7P2JDdpGdfzzf3iyUv21Ig5xwmoD</recordid><startdate>20091012</startdate><enddate>20091012</enddate><creator>Charash, R.</creator><creator>Maaskant, P. P.</creator><creator>Lewis, L.</creator><creator>McAleese, C.</creator><creator>Kappers, M. J.</creator><creator>Humphreys, C. J.</creator><creator>Corbett, B.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20091012</creationdate><title>Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes</title><author>Charash, R. ; Maaskant, P. P. ; Lewis, L. ; McAleese, C. ; Kappers, M. J. ; Humphreys, C. J. ; Corbett, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-670a1ee92bac86eac51d0e57e9dff3a617548fe82b3f4c20fcc7b2700ccc80bd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Charash, R.</creatorcontrib><creatorcontrib>Maaskant, P. P.</creatorcontrib><creatorcontrib>Lewis, L.</creatorcontrib><creatorcontrib>McAleese, C.</creatorcontrib><creatorcontrib>Kappers, M. J.</creatorcontrib><creatorcontrib>Humphreys, C. J.</creatorcontrib><creatorcontrib>Corbett, B.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Charash, R.</au><au>Maaskant, P. P.</au><au>Lewis, L.</au><au>McAleese, C.</au><au>Kappers, M. J.</au><au>Humphreys, C. J.</au><au>Corbett, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes</atitle><jtitle>Applied physics letters</jtitle><date>2009-10-12</date><risdate>2009</risdate><volume>95</volume><issue>15</issue><spage>151103</spage><epage>151103-3</epage><pages>151103-151103-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3244203</doi></addata></record>
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title Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-02T21%3A11%3A53IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Carrier%20distribution%20in%20InGaN/GaN%20tricolor%20multiple%20quantum%20well%20light%20emitting%20diodes&rft.jtitle=Applied%20physics%20letters&rft.au=Charash,%20R.&rft.date=2009-10-12&rft.volume=95&rft.issue=15&rft.spage=151103&rft.epage=151103-3&rft.pages=151103-151103-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3244203&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true