Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation

Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation

We have investigated the influence of alloy buffer and capping layers on the shape, size, and density of self-assembled InAs/GaAs quantum dots. Cross-sectional scanning tunneling microscopy (XSTM) images reveal ellipse-shaped dots with highest (lowest) diameter, height, and density, for dots with (w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2009-10, Vol.95 (16)
Hauptverfasser: Dasika, V. D., Song, J. D., Choi, W. J., Cho, N. K., Lee, J. I., Goldman, R. S.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 16
container_start_page
container_title Applied physics letters
container_volume 95
creator Dasika, V. D.
Song, J. D.
Choi, W. J.
Cho, N. K.
Lee, J. I.
Goldman, R. S.
description We have investigated the influence of alloy buffer and capping layers on the shape, size, and density of self-assembled InAs/GaAs quantum dots. Cross-sectional scanning tunneling microscopy (XSTM) images reveal ellipse-shaped dots with highest (lowest) diameter, height, and density, for dots with (without) surrounding alloy layers. Furthermore, the wetting layer is thicker in the presence of the alloy layers. We propose a strain-based mechanism for dot formation and collapse in the absence and presence of alloy buffer and capping layers. This mechanism is likely to be applicable to a wide range of lattice-mismatched thin-film systems.
doi_str_mv 10.1063/1.3243688
format Article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3243688</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3243688</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-35855d731c819f36ed0dcaa3bb971a18528d9e2fe8bc1ac7a64cb40577f9adf63</originalsourceid><addsrcrecordid>eNotkD1PwzAUAC0EEqUw8A-8MqT1y4tjZ6wqaCNV6gJz9OIPVJTaxU6G_HtAdDrdcsMx9gxiBaLGNaywrLDW-oYtQChVIIC-ZQshBBZ1I-GePeT89auyRFywYxv8MLlgHI-e0zDEmfeT9y5xCpYbulxO4ZMPNLuUeQy8DZu83tEm8--JwjiduY0j9zGdaTzF8MjuPA3ZPV25ZB9vr-_bfXE47trt5lCYsmzGAqWW0ioEo6HxWDsrrCHCvm8UEGhZatu40jvdGyCjqK5MXwmplG_I-hqX7OW_a1LMOTnfXdLpTGnuQHR_JzrorifwBxJkUIc</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation</title><source>American Institute of Physics</source><source>AIP_美国物理联合会期刊回溯（NSTL购买）</source><source>Alma/SFX Local Collection</source><creator>Dasika, V. D. ; Song, J. D. ; Choi, W. J. ; Cho, N. K. ; Lee, J. I. ; Goldman, R. S.</creator><creatorcontrib>Dasika, V. D. ; Song, J. D. ; Choi, W. J. ; Cho, N. K. ; Lee, J. I. ; Goldman, R. S.</creatorcontrib><description>We have investigated the influence of alloy buffer and capping layers on the shape, size, and density of self-assembled InAs/GaAs quantum dots. Cross-sectional scanning tunneling microscopy (XSTM) images reveal ellipse-shaped dots with highest (lowest) diameter, height, and density, for dots with (without) surrounding alloy layers. Furthermore, the wetting layer is thicker in the presence of the alloy layers. We propose a strain-based mechanism for dot formation and collapse in the absence and presence of alloy buffer and capping layers. This mechanism is likely to be applicable to a wide range of lattice-mismatched thin-film systems.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3243688</identifier><language>eng</language><ispartof>Applied physics letters, 2009-10, Vol.95 (16)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-35855d731c819f36ed0dcaa3bb971a18528d9e2fe8bc1ac7a64cb40577f9adf63</citedby><cites>FETCH-LOGICAL-c229t-35855d731c819f36ed0dcaa3bb971a18528d9e2fe8bc1ac7a64cb40577f9adf63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Dasika, V. D.</creatorcontrib><creatorcontrib>Song, J. D.</creatorcontrib><creatorcontrib>Choi, W. J.</creatorcontrib><creatorcontrib>Cho, N. K.</creatorcontrib><creatorcontrib>Lee, J. I.</creatorcontrib><creatorcontrib>Goldman, R. S.</creatorcontrib><title>Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation</title><title>Applied physics letters</title><description>We have investigated the influence of alloy buffer and capping layers on the shape, size, and density of self-assembled InAs/GaAs quantum dots. Cross-sectional scanning tunneling microscopy (XSTM) images reveal ellipse-shaped dots with highest (lowest) diameter, height, and density, for dots with (without) surrounding alloy layers. Furthermore, the wetting layer is thicker in the presence of the alloy layers. We propose a strain-based mechanism for dot formation and collapse in the absence and presence of alloy buffer and capping layers. This mechanism is likely to be applicable to a wide range of lattice-mismatched thin-film systems.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkD1PwzAUAC0EEqUw8A-8MqT1y4tjZ6wqaCNV6gJz9OIPVJTaxU6G_HtAdDrdcsMx9gxiBaLGNaywrLDW-oYtQChVIIC-ZQshBBZ1I-GePeT89auyRFywYxv8MLlgHI-e0zDEmfeT9y5xCpYbulxO4ZMPNLuUeQy8DZu83tEm8--JwjiduY0j9zGdaTzF8MjuPA3ZPV25ZB9vr-_bfXE47trt5lCYsmzGAqWW0ioEo6HxWDsrrCHCvm8UEGhZatu40jvdGyCjqK5MXwmplG_I-hqX7OW_a1LMOTnfXdLpTGnuQHR_JzrorifwBxJkUIc</recordid><startdate>20091019</startdate><enddate>20091019</enddate><creator>Dasika, V. D.</creator><creator>Song, J. D.</creator><creator>Choi, W. J.</creator><creator>Cho, N. K.</creator><creator>Lee, J. I.</creator><creator>Goldman, R. S.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20091019</creationdate><title>Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation</title><author>Dasika, V. D. ; Song, J. D. ; Choi, W. J. ; Cho, N. K. ; Lee, J. I. ; Goldman, R. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-35855d731c819f36ed0dcaa3bb971a18528d9e2fe8bc1ac7a64cb40577f9adf63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dasika, V. D.</creatorcontrib><creatorcontrib>Song, J. D.</creatorcontrib><creatorcontrib>Choi, W. J.</creatorcontrib><creatorcontrib>Cho, N. K.</creatorcontrib><creatorcontrib>Lee, J. I.</creatorcontrib><creatorcontrib>Goldman, R. S.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dasika, V. D.</au><au>Song, J. D.</au><au>Choi, W. J.</au><au>Cho, N. K.</au><au>Lee, J. I.</au><au>Goldman, R. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation</atitle><jtitle>Applied physics letters</jtitle><date>2009-10-19</date><risdate>2009</risdate><volume>95</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We have investigated the influence of alloy buffer and capping layers on the shape, size, and density of self-assembled InAs/GaAs quantum dots. Cross-sectional scanning tunneling microscopy (XSTM) images reveal ellipse-shaped dots with highest (lowest) diameter, height, and density, for dots with (without) surrounding alloy layers. Furthermore, the wetting layer is thicker in the presence of the alloy layers. We propose a strain-based mechanism for dot formation and collapse in the absence and presence of alloy buffer and capping layers. This mechanism is likely to be applicable to a wide range of lattice-mismatched thin-film systems.</abstract><doi>10.1063/1.3243688</doi></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2009-10, Vol.95 (16)
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_3243688
source American Institute of Physics; AIP_美国物理联合会期刊回溯（NSTL购买）; Alma/SFX Local Collection
title Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T20%3A56%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Influence%20of%20alloy%20buffer%20and%20capping%20layers%20on%20InAs/GaAs%20quantum%20dot%20formation&rft.jtitle=Applied%20physics%20letters&rft.au=Dasika,%20V.%20D.&rft.date=2009-10-19&rft.volume=95&rft.issue=16&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3243688&rft_dat=%3Ccrossref%3E10_1063_1_3243688%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true