Self-sustained etch masking: A general concept to initiate the formation of nanopatterns during ion erosion

A material allowing for rapid and reliable formation of nanopatterned surfaces is an important issue in many areas of science today. Self-organized pattern formation induced by ion erosion is a promising bottom-up approach. In the case of the III-V semiconductors, this method can lead to several rem...

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Veröffentlicht in:	Journal of applied physics 2009-11, Vol.106 (9), p.094308-094308-5
Hauptverfasser:	Le Roy, S., Barthel, E., Brun, N., Lelarge, A., Søndergård, E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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