Temperature dependence of current-voltage characteristics in highly doped Ag/ p -GaN/In Schottky diodes

To obtain detailed information about the conduction process of the Ag/ p -GaN Schottky diodes (SDs) fabricated by us, we measured the I - V characteristics over the temperature range of 80-360 K by the steps of 20 K. The slope of the linear portion of the forward bias I - V plot and n k T = E 0 of t...

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Veröffentlicht in:	Journal of applied physics 2009-10, Vol.106 (7), p.073717-073717-5
Hauptverfasser:	Çınar, K., Yıldırım, N., Coşkun, C., Turut, A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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