The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors

We investigated the threshold voltage (Vth) instability for various gate dielectrics (SiNx and SiOx) in amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). The a-IGZO TFTs with SiNx 150 °C exhibited reasonable electrical performance (field-effect mobility of 8.1 cm2/V s and Io...

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Veröffentlicht in:	Applied physics letters 2009-09, Vol.95 (12)
Hauptverfasser:	Lee, Jaeseob, Park, Jin-Seong, Pyo, Young Shin, Lee, Dong Bum, Kim, Eun Hyun, Stryakhilev, Denis, Kim, Tae Woong, Jin, Dong Un, Mo, Yeon-Gon
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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