Impact ionization and positive charge in thin SiO2 films

The magnitude and the centroid of the positive charge induced in the SiO2 layer of an MOS capacitor have been determined from measurements of deviations of the fields at the electrodes from the average field in the oxide. The field at the metal electron-injecting electrode is found from the current...

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Veröffentlicht in:	Journal of applied physics 1976-01, Vol.47 (7), p.3192-3202
Hauptverfasser:	Shatzkes, Morris, Av-Ron, Moshe
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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