Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga
In order to explain the higher short-circuit current ( J sc ) with comparable open-circuit voltage ( V oc ) from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient ( D ) and electron lifetime ( τ ) in DSCs with and without Ga-modifie...
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| Veröffentlicht in: | Journal of applied physics 2009-09, Vol.106 (6), p.064316-064316-4 |
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| container_title | Journal of applied physics |
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| creator | Gonçalves, Agnaldo de Souza Davolos, Marian R. Masaki, Naruhiko Yanagida, Shozo Mori, Shogo Nogueira, Ana F. |
| description | In order to explain the higher short-circuit current
(
J
sc
)
with comparable open-circuit voltage
(
V
oc
)
from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient
(
D
)
and electron lifetime
(
τ
)
in DSCs with and without Ga-modified ZnO were studied by stepped light-induced transient measurements of photocurrent and voltage. In comparison to DSCs based on ZnO electrodes, the ZnO:Ga-based solar cells provided lower
D
and higher
τ
values. The results were interpreted according to the transport-limited recombination model, where the Ga modification induced a higher density of intraband charge traps. At matched electron densities, a decrease in
V
oc
from DSCs based on ZnO:Ga was observed, suggesting a positive shift of the ZnO:Ga conduction band edge. The higher
J
sc
can be explained by the positive shift of the ZnO:Ga conduction band edge in addition to the increased roughness factor of the electrode due to the Ga modification. |
| doi_str_mv | 10.1063/1.3226073 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3226073</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-e98d2c600c069534c90104143e536b3b59e91cc2c44063710ba6fb36561ddff3</originalsourceid><addsrcrecordid>eNp1kDtPwzAUhS0EEqUw8A-8MqRcx4kTMyChihakSh3oxGI5jtMapXZku0hl4LfjPlamcx_nnOFD6J7AhACjj2RC85xBRS_QiEDNs6os4RKNAHKS1bzi1-gmhC8AQmrKR-j3I-ph0C3uzXoTM2PbnUpb9NIGo23EWy3DzuttmgN2HR42Ljq18_7wlLbF366Pcq2xsbjd6yzoFIzmJ5UE10uPle77gBsZ0sVZ_GmXx1jSp7m8RVed7IO-O-sYrWavq-lbtljO36cvi0zRuoyZ5nWbKwaggPGSFooDgYIUVJeUNbQpueZEqVwVRYJQEWgk6xrKSkbatuvoGD2capV3IXjdicGbrfR7QUAcuAkiztyS9_nkDcpEGY2z_5vP8MQRnjjBo3-Idnat</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Gonçalves, Agnaldo de Souza ; Davolos, Marian R. ; Masaki, Naruhiko ; Yanagida, Shozo ; Mori, Shogo ; Nogueira, Ana F.</creator><creatorcontrib>Gonçalves, Agnaldo de Souza ; Davolos, Marian R. ; Masaki, Naruhiko ; Yanagida, Shozo ; Mori, Shogo ; Nogueira, Ana F.</creatorcontrib><description>In order to explain the higher short-circuit current
(
J
sc
)
with comparable open-circuit voltage
(
V
oc
)
from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient
(
D
)
and electron lifetime
(
τ
)
in DSCs with and without Ga-modified ZnO were studied by stepped light-induced transient measurements of photocurrent and voltage. In comparison to DSCs based on ZnO electrodes, the ZnO:Ga-based solar cells provided lower
D
and higher
τ
values. The results were interpreted according to the transport-limited recombination model, where the Ga modification induced a higher density of intraband charge traps. At matched electron densities, a decrease in
V
oc
from DSCs based on ZnO:Ga was observed, suggesting a positive shift of the ZnO:Ga conduction band edge. The higher
J
sc
can be explained by the positive shift of the ZnO:Ga conduction band edge in addition to the increased roughness factor of the electrode due to the Ga modification.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3226073</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2009-09, Vol.106 (6), p.064316-064316-4</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-e98d2c600c069534c90104143e536b3b59e91cc2c44063710ba6fb36561ddff3</citedby><cites>FETCH-LOGICAL-c385t-e98d2c600c069534c90104143e536b3b59e91cc2c44063710ba6fb36561ddff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3226073$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76353,76359</link.rule.ids></links><search><creatorcontrib>Gonçalves, Agnaldo de Souza</creatorcontrib><creatorcontrib>Davolos, Marian R.</creatorcontrib><creatorcontrib>Masaki, Naruhiko</creatorcontrib><creatorcontrib>Yanagida, Shozo</creatorcontrib><creatorcontrib>Mori, Shogo</creatorcontrib><creatorcontrib>Nogueira, Ana F.</creatorcontrib><title>Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga</title><title>Journal of applied physics</title><description>In order to explain the higher short-circuit current
(
J
sc
)
with comparable open-circuit voltage
(
V
oc
)
from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient
(
D
)
and electron lifetime
(
τ
)
in DSCs with and without Ga-modified ZnO were studied by stepped light-induced transient measurements of photocurrent and voltage. In comparison to DSCs based on ZnO electrodes, the ZnO:Ga-based solar cells provided lower
D
and higher
τ
values. The results were interpreted according to the transport-limited recombination model, where the Ga modification induced a higher density of intraband charge traps. At matched electron densities, a decrease in
V
oc
from DSCs based on ZnO:Ga was observed, suggesting a positive shift of the ZnO:Ga conduction band edge. The higher
J
sc
can be explained by the positive shift of the ZnO:Ga conduction band edge in addition to the increased roughness factor of the electrode due to the Ga modification.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kDtPwzAUhS0EEqUw8A-8MqRcx4kTMyChihakSh3oxGI5jtMapXZku0hl4LfjPlamcx_nnOFD6J7AhACjj2RC85xBRS_QiEDNs6os4RKNAHKS1bzi1-gmhC8AQmrKR-j3I-ph0C3uzXoTM2PbnUpb9NIGo23EWy3DzuttmgN2HR42Ljq18_7wlLbF366Pcq2xsbjd6yzoFIzmJ5UE10uPle77gBsZ0sVZ_GmXx1jSp7m8RVed7IO-O-sYrWavq-lbtljO36cvi0zRuoyZ5nWbKwaggPGSFooDgYIUVJeUNbQpueZEqVwVRYJQEWgk6xrKSkbatuvoGD2capV3IXjdicGbrfR7QUAcuAkiztyS9_nkDcpEGY2z_5vP8MQRnjjBo3-Idnat</recordid><startdate>20090915</startdate><enddate>20090915</enddate><creator>Gonçalves, Agnaldo de Souza</creator><creator>Davolos, Marian R.</creator><creator>Masaki, Naruhiko</creator><creator>Yanagida, Shozo</creator><creator>Mori, Shogo</creator><creator>Nogueira, Ana F.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090915</creationdate><title>Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga</title><author>Gonçalves, Agnaldo de Souza ; Davolos, Marian R. ; Masaki, Naruhiko ; Yanagida, Shozo ; Mori, Shogo ; Nogueira, Ana F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-e98d2c600c069534c90104143e536b3b59e91cc2c44063710ba6fb36561ddff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gonçalves, Agnaldo de Souza</creatorcontrib><creatorcontrib>Davolos, Marian R.</creatorcontrib><creatorcontrib>Masaki, Naruhiko</creatorcontrib><creatorcontrib>Yanagida, Shozo</creatorcontrib><creatorcontrib>Mori, Shogo</creatorcontrib><creatorcontrib>Nogueira, Ana F.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gonçalves, Agnaldo de Souza</au><au>Davolos, Marian R.</au><au>Masaki, Naruhiko</au><au>Yanagida, Shozo</au><au>Mori, Shogo</au><au>Nogueira, Ana F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga</atitle><jtitle>Journal of applied physics</jtitle><date>2009-09-15</date><risdate>2009</risdate><volume>106</volume><issue>6</issue><spage>064316</spage><epage>064316-4</epage><pages>064316-064316-4</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>In order to explain the higher short-circuit current
(
J
sc
)
with comparable open-circuit voltage
(
V
oc
)
from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient
(
D
)
and electron lifetime
(
τ
)
in DSCs with and without Ga-modified ZnO were studied by stepped light-induced transient measurements of photocurrent and voltage. In comparison to DSCs based on ZnO electrodes, the ZnO:Ga-based solar cells provided lower
D
and higher
τ
values. The results were interpreted according to the transport-limited recombination model, where the Ga modification induced a higher density of intraband charge traps. At matched electron densities, a decrease in
V
oc
from DSCs based on ZnO:Ga was observed, suggesting a positive shift of the ZnO:Ga conduction band edge. The higher
J
sc
can be explained by the positive shift of the ZnO:Ga conduction band edge in addition to the increased roughness factor of the electrode due to the Ga modification.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3226073</doi><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2009-09, Vol.106 (6), p.064316-064316-4 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3226073 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga |
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