Memristive switching of MgO based magnetic tunnel junctions

Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending...

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Veröffentlicht in:	Applied physics letters 2009-09, Vol.95 (11), p.112508-112508-3
Hauptverfasser:	Krzysteczko, Patryk, Reiss, Günter, Thomas, Andy
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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