Memristive switching of MgO based magnetic tunnel junctions

Memristive switching of MgO based magnetic tunnel junctions

Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending...

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Veröffentlicht in:Applied physics letters 2009-09, Vol.95 (11), p.112508-112508-3
Hauptverfasser: Krzysteczko, Patryk, Reiss, Günter, Thomas, Andy
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container_title Applied physics letters
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creator Krzysteczko, Patryk
Reiss, Günter
Thomas, Andy
description Here we demonstrate that both, tunnel magnetoresistance (TMR) and resistive switching (RS), can be observed simultaneously in nanoscale magnetic tunnel junctions. The devices show bipolar RS of 6% and TMR ratios of about 100%. For each magnetic state, multiple resistive states are created depending on the bias history, which provides a method for multibit data storage and logic. The electronic transport measurements are discussed in the framework of a memristive system. Differently prepared MgO barriers are compared to gain insight into the switching mechanism.
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title Memristive switching of MgO based magnetic tunnel junctions
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