Dependence of surface recombination velocity of InSb on temperature and α bombardment dose

Dependence of surface recombination velocity of InSb on temperature and α bombardment dose

The influence of temperature on surface recombination velocity S is studied by photomagnetoelectric measurements, for four specimens of n InSb before and after α particle bombardment at room temperature. A maximum is observed in all curves. The influence of dose on S is confirmed to be linear. We tr...

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Veröffentlicht in:Journal of applied physics 1976-01, Vol.47 (10), p.4693-4696
Hauptverfasser: Skountzos, P. A., Euthymiou, P. C.
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Euthymiou, P. C.
description The influence of temperature on surface recombination velocity S is studied by photomagnetoelectric measurements, for four specimens of n InSb before and after α particle bombardment at room temperature. A maximum is observed in all curves. The influence of dose on S is confirmed to be linear. We try to explain the observed maxima proposing a model for the position of energy levels Et of the recombination centers into the energy gap at higher and lower values of temperature than its value To at which the observed maximum occurs.
doi_str_mv 10.1063/1.322364
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title Dependence of surface recombination velocity of InSb on temperature and α bombardment dose
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