Threshold field of phase change memory materials measured using phase change bridge devices

The threshold switching effect of phase change memory devices is typically parameterized by the threshold voltage at which this breakdown occurs. Using phase change memory bridge devices of variable length, we prove unambiguously that the important parameter for threshold switching is a critical ele...

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Veröffentlicht in:	Applied physics letters 2009-08, Vol.95 (8)
Hauptverfasser:	Krebs, Daniel, Raoux, Simone, Rettner, Charles T., Burr, Geoffrey W., Salinga, Martin, Wuttig, Matthias
Format:	Artikel
Sprache:	eng
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container_title	Applied physics letters
container_volume	95
creator	Krebs, Daniel Raoux, Simone Rettner, Charles T. Burr, Geoffrey W. Salinga, Martin Wuttig, Matthias
description	The threshold switching effect of phase change memory devices is typically parameterized by the threshold voltage at which this breakdown occurs. Using phase change memory bridge devices of variable length, we prove unambiguously that the important parameter for threshold switching is a critical electrical field and not a threshold voltage. By switching phase change bridge devices from the amorphous-as-deposited state, we obtain threshold fields for Ge15Sb85, Ag- and In-doped Sb2Te, Ge2Sb2Te5, and 4 nm thick Sb devices of 8.1, 19, 56, and 94 V/μm, respectively.
doi_str_mv	10.1063/1.3210792
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3210792</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3210792</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-cb161a6827686892c18483fe858ef5fff03f8bd22de867dc6784b6d327a4ab0d3</originalsourceid><addsrcrecordid>eNpVkLFOwzAQhi0EEqEw8AZeGVJ8dmI7I6qAIlViKROD5djnxqhpKrtF6ttjRBeW-3S__rvhI-Qe2ByYFI8wFxyY6vgFqQpVLQD0JakYY6KWXQvX5Cbnr7K2XIiKfK6HhHmYtp6GiGVOge4Hm5G6we42SEccp3Sioz1ginabS2DzMaGnxxx3m__lPkVf4PE7Osy35CqUC7w7c0Y-Xp7Xi2W9en99Wzytasd5d6hdDxKs1FxJLXXHHehGi4C61RjaEAITQfeec49aKu-k0k0vveDKNrZnXszIw99fl6acEwazT3G06WSAmV8rBszZivgB97RVHw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Threshold field of phase change memory materials measured using phase change bridge devices</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Krebs, Daniel ; Raoux, Simone ; Rettner, Charles T. ; Burr, Geoffrey W. ; Salinga, Martin ; Wuttig, Matthias</creator><creatorcontrib>Krebs, Daniel ; Raoux, Simone ; Rettner, Charles T. ; Burr, Geoffrey W. ; Salinga, Martin ; Wuttig, Matthias</creatorcontrib><description>The threshold switching effect of phase change memory devices is typically parameterized by the threshold voltage at which this breakdown occurs. Using phase change memory bridge devices of variable length, we prove unambiguously that the important parameter for threshold switching is a critical electrical field and not a threshold voltage. By switching phase change bridge devices from the amorphous-as-deposited state, we obtain threshold fields for Ge15Sb85, Ag- and In-doped Sb2Te, Ge2Sb2Te5, and 4 nm thick Sb devices of 8.1, 19, 56, and 94 V/μm, respectively.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3210792</identifier><language>eng</language><ispartof>Applied physics letters, 2009-08, Vol.95 (8)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-cb161a6827686892c18483fe858ef5fff03f8bd22de867dc6784b6d327a4ab0d3</citedby><cites>FETCH-LOGICAL-c229t-cb161a6827686892c18483fe858ef5fff03f8bd22de867dc6784b6d327a4ab0d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Krebs, Daniel</creatorcontrib><creatorcontrib>Raoux, Simone</creatorcontrib><creatorcontrib>Rettner, Charles T.</creatorcontrib><creatorcontrib>Burr, Geoffrey W.</creatorcontrib><creatorcontrib>Salinga, Martin</creatorcontrib><creatorcontrib>Wuttig, Matthias</creatorcontrib><title>Threshold field of phase change memory materials measured using phase change bridge devices</title><title>Applied physics letters</title><description>The threshold switching effect of phase change memory devices is typically parameterized by the threshold voltage at which this breakdown occurs. Using phase change memory bridge devices of variable length, we prove unambiguously that the important parameter for threshold switching is a critical electrical field and not a threshold voltage. By switching phase change bridge devices from the amorphous-as-deposited state, we obtain threshold fields for Ge15Sb85, Ag- and In-doped Sb2Te, Ge2Sb2Te5, and 4 nm thick Sb devices of 8.1, 19, 56, and 94 V/μm, respectively.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNpVkLFOwzAQhi0EEqEw8AZeGVJ8dmI7I6qAIlViKROD5djnxqhpKrtF6ttjRBeW-3S__rvhI-Qe2ByYFI8wFxyY6vgFqQpVLQD0JakYY6KWXQvX5Cbnr7K2XIiKfK6HhHmYtp6GiGVOge4Hm5G6we42SEccp3Sioz1ginabS2DzMaGnxxx3m__lPkVf4PE7Osy35CqUC7w7c0Y-Xp7Xi2W9en99Wzytasd5d6hdDxKs1FxJLXXHHehGi4C61RjaEAITQfeec49aKu-k0k0vveDKNrZnXszIw99fl6acEwazT3G06WSAmV8rBszZivgB97RVHw</recordid><startdate>20090824</startdate><enddate>20090824</enddate><creator>Krebs, Daniel</creator><creator>Raoux, Simone</creator><creator>Rettner, Charles T.</creator><creator>Burr, Geoffrey W.</creator><creator>Salinga, Martin</creator><creator>Wuttig, Matthias</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090824</creationdate><title>Threshold field of phase change memory materials measured using phase change bridge devices</title><author>Krebs, Daniel ; Raoux, Simone ; Rettner, Charles T. ; Burr, Geoffrey W. ; Salinga, Martin ; Wuttig, Matthias</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-cb161a6827686892c18483fe858ef5fff03f8bd22de867dc6784b6d327a4ab0d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Krebs, Daniel</creatorcontrib><creatorcontrib>Raoux, Simone</creatorcontrib><creatorcontrib>Rettner, Charles T.</creatorcontrib><creatorcontrib>Burr, Geoffrey W.</creatorcontrib><creatorcontrib>Salinga, Martin</creatorcontrib><creatorcontrib>Wuttig, Matthias</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Krebs, Daniel</au><au>Raoux, Simone</au><au>Rettner, Charles T.</au><au>Burr, Geoffrey W.</au><au>Salinga, Martin</au><au>Wuttig, Matthias</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Threshold field of phase change memory materials measured using phase change bridge devices</atitle><jtitle>Applied physics letters</jtitle><date>2009-08-24</date><risdate>2009</risdate><volume>95</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The threshold switching effect of phase change memory devices is typically parameterized by the threshold voltage at which this breakdown occurs. Using phase change memory bridge devices of variable length, we prove unambiguously that the important parameter for threshold switching is a critical electrical field and not a threshold voltage. By switching phase change bridge devices from the amorphous-as-deposited state, we obtain threshold fields for Ge15Sb85, Ag- and In-doped Sb2Te, Ge2Sb2Te5, and 4 nm thick Sb devices of 8.1, 19, 56, and 94 V/μm, respectively.</abstract><doi>10.1063/1.3210792</doi></addata></record>
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issn	0003-6951 1077-3118
language	eng
recordid	cdi_crossref_primary_10_1063_1_3210792
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title	Threshold field of phase change memory materials measured using phase change bridge devices
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T09%3A21%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Threshold%20field%20of%20phase%20change%20memory%20materials%20measured%20using%20phase%20change%20bridge%20devices&rft.jtitle=Applied%20physics%20letters&rft.au=Krebs,%20Daniel&rft.date=2009-08-24&rft.volume=95&rft.issue=8&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3210792&rft_dat=%3Ccrossref%3E10_1063_1_3210792%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true