Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures

The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at l...

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Veröffentlicht in:	Applied physics letters 2009-08, Vol.95 (5), p.051921-051921-3
Hauptverfasser:	Redondo-Cubero, A., Lorenz, K., Gago, R., Franco, N., Fernández-Garrido, S., Smulders, P. J. M., Muñoz, E., Calleja, E., Watson, I. M., Alves, E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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