Explosive crystallization of amorphous silicon films by flash lamp annealing

Explosive crystallization of amorphous silicon films by flash lamp annealing

Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates. The EC starts from the edges of the a-Si films due to additional heating from flash lamp light. This is followed by lateral crystallization with a veloc...

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Veröffentlicht in:Journal of applied physics 2009-08, Vol.106 (4)
Hauptverfasser: Ohdaira, Keisuke, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Matsumura, Hideki
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Fujiwara, Tomoko
Endo, Yohei
Nishizaki, Shogo
Matsumura, Hideki
description Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates. The EC starts from the edges of the a-Si films due to additional heating from flash lamp light. This is followed by lateral crystallization with a velocity on the order of m/s, leaving behind periodic microstructures in which regions containing several hundreds of nm-ordered grains and regions consisting of only 10-nm-sized fine grains alternatively appear. The formation of the dense grains can be understood as explosive solid-phase nucleation, whereas the several hundreds of nanometer-sized grains, stretched in the lateral direction, are probably formed through explosive liquid-phase epitaxy. This phenomenon will be applied to the high-throughput formation of thick poly-Si films for solar cells.
doi_str_mv 10.1063/1.3195089
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title Explosive crystallization of amorphous silicon films by flash lamp annealing
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