Measurement of the Peltier coefficient of semiconductors by lock-in thermography

Lock-in thermography is applied to image Joule heating and Peltier-type heat transport separately. Images obtained for a multicrystalline silicon solar cell are quantitatively evaluated using an integration method. The results are interpreted in terms of diffusion and electron/hole drag contributions. The approach presented is especially interesting where the thermal contact resistance to the sample is a problem and where versatility with respect to sample geometry is needed. A further advantage of the method is that it does not need any separate power or temperature calibration.