Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices

This study examined the electrical properties of Ti/MnO2/Pt devices with stable and reproducible bipolar resistive switching behavior. The dependency of the memory behavior on the cell area and operating temperature suggest that the conducting mechanism in the low resistance states is due to the loc...

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Veröffentlicht in:	Applied physics letters 2009-07, Vol.95 (4)
Hauptverfasser:	Yang, Min Kyu, Park, Jae-Wan, Ko, Tae Kuk, Lee, Jeon-Kook
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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