Photoconductance of aligned SnO2 nanowire field effect transistors

We report on the optoelectronic properties of the aligned SnO2 nanowire (NW) field effect transistors (FETs) fabricated via a sliding transfer of NWs grown by chemical vapor deposition. Photocurrent measurements with polarized UV light confirmed a well aligned NWs along the channels. UV photosensiti...

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Veröffentlicht in:	Applied physics letters 2009-07, Vol.95 (4)
Hauptverfasser:	Kim, DaeIl, Kim, Yong-Kwan, Park, Sung Chan, Ha, Jeong Sook, Huh, Junghwan, Kim, Gyu-Tae
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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