Enhanced domain contribution to ferroelectric properties in freestanding thick films
We report the success in fabricating clamped, "island," and freestanding 10 μ m thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon ( Pt / Ti / SiO...
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| Veröffentlicht in: | Journal of applied physics 2009-07, Vol.106 (2), p.024108-024108-4 |
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| Sprache: | eng |
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| container_end_page | 024108-4 |
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| container_issue | 2 |
| container_start_page | 024108 |
| container_title | Journal of applied physics |
| container_volume | 106 |
| creator | Ryu, Jungho Priya, Shashank Park, Chee-Sung Kim, Kun-Young Choi, Jong-Jin Hahn, Byung-Dong Yoon, Woon-Ha Lee, Byoung-Kuk Park, Dong-Soo Park, Chan |
| description | We report the success in fabricating clamped, "island," and freestanding
10
μ
m
thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon
(
Pt
/
Ti
/
SiO
2
/
Si
)
substrate and crystallization was conducted by annealing at
700
°
C
. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy. |
| doi_str_mv | 10.1063/1.3181058 |
| format | Article |
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10
μ
m
thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon
(
Pt
/
Ti
/
SiO
2
/
Si
)
substrate and crystallization was conducted by annealing at
700
°
C
. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3181058</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2009-07, Vol.106 (2), p.024108-024108-4</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-31ce7767e89de436300ec81cd010c9a9c4f8ed01d0e792e25addb549694505623</citedby><cites>FETCH-LOGICAL-c385t-31ce7767e89de436300ec81cd010c9a9c4f8ed01d0e792e25addb549694505623</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3181058$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76127,76133</link.rule.ids></links><search><creatorcontrib>Ryu, Jungho</creatorcontrib><creatorcontrib>Priya, Shashank</creatorcontrib><creatorcontrib>Park, Chee-Sung</creatorcontrib><creatorcontrib>Kim, Kun-Young</creatorcontrib><creatorcontrib>Choi, Jong-Jin</creatorcontrib><creatorcontrib>Hahn, Byung-Dong</creatorcontrib><creatorcontrib>Yoon, Woon-Ha</creatorcontrib><creatorcontrib>Lee, Byoung-Kuk</creatorcontrib><creatorcontrib>Park, Dong-Soo</creatorcontrib><creatorcontrib>Park, Chan</creatorcontrib><title>Enhanced domain contribution to ferroelectric properties in freestanding thick films</title><title>Journal of applied physics</title><description>We report the success in fabricating clamped, "island," and freestanding
10
μ
m
thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon
(
Pt
/
Ti
/
SiO
2
/
Si
)
substrate and crystallization was conducted by annealing at
700
°
C
. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEURYMoWKsL_0G2Lqa-N5nMJBtBSv2Agpu6DmnyxkbbSUniwn_vlNalq8d9HC7cw9gtwgyhFfc4E6gQpDpjEwSlq05KOGcTgBorpTt9ya5y_gRAVEJP2GoxbOzgyHMfdzYM3MWhpLD-LiEOvETeU0qRtuTGr-P7FPeUSqDMR7ZPRLnYwYfhg5dNcF-8D9tdvmYXvd1mujndKXt_WqzmL9Xy7fl1_risnFCyVAIddV3bkdKeGtEKAHIKnQcEp612Ta9oDB6o0zXV0nq_lo1udSNBtrWYsrtjr0sx50S92aews-nHIJiDDoPmpGNkH45sdqHYw7r_4T8n5ujEHJyIX7-WaJM</recordid><startdate>20090715</startdate><enddate>20090715</enddate><creator>Ryu, Jungho</creator><creator>Priya, Shashank</creator><creator>Park, Chee-Sung</creator><creator>Kim, Kun-Young</creator><creator>Choi, Jong-Jin</creator><creator>Hahn, Byung-Dong</creator><creator>Yoon, Woon-Ha</creator><creator>Lee, Byoung-Kuk</creator><creator>Park, Dong-Soo</creator><creator>Park, Chan</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090715</creationdate><title>Enhanced domain contribution to ferroelectric properties in freestanding thick films</title><author>Ryu, Jungho ; Priya, Shashank ; Park, Chee-Sung ; Kim, Kun-Young ; Choi, Jong-Jin ; Hahn, Byung-Dong ; Yoon, Woon-Ha ; Lee, Byoung-Kuk ; Park, Dong-Soo ; Park, Chan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-31ce7767e89de436300ec81cd010c9a9c4f8ed01d0e792e25addb549694505623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ryu, Jungho</creatorcontrib><creatorcontrib>Priya, Shashank</creatorcontrib><creatorcontrib>Park, Chee-Sung</creatorcontrib><creatorcontrib>Kim, Kun-Young</creatorcontrib><creatorcontrib>Choi, Jong-Jin</creatorcontrib><creatorcontrib>Hahn, Byung-Dong</creatorcontrib><creatorcontrib>Yoon, Woon-Ha</creatorcontrib><creatorcontrib>Lee, Byoung-Kuk</creatorcontrib><creatorcontrib>Park, Dong-Soo</creatorcontrib><creatorcontrib>Park, Chan</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ryu, Jungho</au><au>Priya, Shashank</au><au>Park, Chee-Sung</au><au>Kim, Kun-Young</au><au>Choi, Jong-Jin</au><au>Hahn, Byung-Dong</au><au>Yoon, Woon-Ha</au><au>Lee, Byoung-Kuk</au><au>Park, Dong-Soo</au><au>Park, Chan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced domain contribution to ferroelectric properties in freestanding thick films</atitle><jtitle>Journal of applied physics</jtitle><date>2009-07-15</date><risdate>2009</risdate><volume>106</volume><issue>2</issue><spage>024108</spage><epage>024108-4</epage><pages>024108-024108-4</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>We report the success in fabricating clamped, "island," and freestanding
10
μ
m
thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon
(
Pt
/
Ti
/
SiO
2
/
Si
)
substrate and crystallization was conducted by annealing at
700
°
C
. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3181058</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of applied physics, 2009-07, Vol.106 (2), p.024108-024108-4 |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Enhanced domain contribution to ferroelectric properties in freestanding thick films |
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