Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes

Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes

Ultraviolet light-emitting diodes based on ZnO/NiO heterojunctions were fabricated on commercially available n+-GaN/sapphire substrates using a radio frequency magnetron sputtering system. Near band edge emission of ZnO peaking at ∼370 nm with a full-width at half maximum of ∼7 nm was achieved at ro...

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Veröffentlicht in:Applied physics letters 2009-07, Vol.95 (1)
Hauptverfasser: Long, Hao, Fang, Guojia, Huang, Huihui, Mo, Xiaoming, Xia, Wei, Dong, Binzhong, Meng, Xianquan, Zhao, Xingzhong
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container_title Applied physics letters
container_volume 95
creator Long, Hao
Fang, Guojia
Huang, Huihui
Mo, Xiaoming
Xia, Wei
Dong, Binzhong
Meng, Xianquan
Zhao, Xingzhong
description Ultraviolet light-emitting diodes based on ZnO/NiO heterojunctions were fabricated on commercially available n+-GaN/sapphire substrates using a radio frequency magnetron sputtering system. Near band edge emission of ZnO peaking at ∼370 nm with a full-width at half maximum of ∼7 nm was achieved at room temperature when the devices were under sufficient forward bias. With the help of an electron blocking i-Mg1−xZnxO(0
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Near band edge emission of ZnO peaking at ∼370 nm with a full-width at half maximum of ∼7 nm was achieved at room temperature when the devices were under sufficient forward bias. With the help of an electron blocking i-Mg1−xZnxO(0&lt;x&lt;1) layer inserted between the ZnO and NiO layers, the emission intensity has been much enhanced and the threshold current drops down to ∼23 from ∼70 mA. 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title Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes
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