Integration of reduced graphene oxide into organic field-effect transistors as conducting electrodes and as a metal modification layer

The characteristics of thin-film transistors (TFTs) with pentacene active layers and source/drain contact layers consisting of either Au, Au coated with highly reduced graphene oxide (HRG), or plain HRG, are compared. It is shown that the incorporation of HRG as an interfacial material between gold...

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Veröffentlicht in:Applied physics letters 2009-07, Vol.95 (2), p.023304-023304-3
Hauptverfasser: Lee, Chen-Guan, Park, Sungjin, Ruoff, Rodney S., Dodabalapur, Ananth
Format: Artikel
Sprache:eng
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