High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures
We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanc...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2009-07, Vol.95 (1), p.011108-011108-3 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 011108-3 |
|---|---|
| container_issue | 1 |
| container_start_page | 011108 |
| container_title | Applied physics letters |
| container_volume | 95 |
| creator | Lee, J. W. Sone, C. Park, Y. Lee, S.-N. Ryou, J.-H. Dupuis, R. D. Hong, C.-H. Kim, H. |
| description | We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanced up to 56%. Compared to the reference, the
n
-GaN
template grown on IHPDM-embedded structure also showed a reduction in the dislocation density by 57%, leading to an increase in photoluminescence intensity by 82%. The LED fabricated on IHPDM-embedded structure exhibited a reduction in the forward leakage current by one order of magnitude
(
<
1.5
V
)
and an enhancement in the output power by 41%. |
| doi_str_mv | 10.1063/1.3166868 |
| format | Article |
| fullrecord | <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3166868</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-LOGICAL-c283t-5d5448ebced803fab876ff99108742c081719fa406d2f4fa5082a6a9153a63c43</originalsourceid><addsrcrecordid>eNp1kD1PwzAQhi0EEqEw8A-yMrj44sRxBgZUQYtUwQKzdfFHMTQJst2h_x5XrcTEdLr3fXQnPYTcApsDE_we5hyEkEKekQJY21IOIM9JwRjjVHQNXJKrGL_y2lScFwRXfvNZWue89nbU-3KJr7THaE25zU2idvAp-XFTGj8ZG0uHffAaUwamMYd2a3XKSTlg_M50b43JXUxhp9Mu2HhNLhxuo705zRn5eH56X6zo-m35snhcU11JnmhjmrqWttfWSMbzF9kK57oOmGzrSjMJLXQOayZM5WqHDZMVCuyg4Si4rvmM3B3v6jDFGKxTP8EPGPYKmDq4UaBObjL7cGSj9gmTn8b_4YMg9SdIZUH8F5NYa90</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Lee, J. W. ; Sone, C. ; Park, Y. ; Lee, S.-N. ; Ryou, J.-H. ; Dupuis, R. D. ; Hong, C.-H. ; Kim, H.</creator><creatorcontrib>Lee, J. W. ; Sone, C. ; Park, Y. ; Lee, S.-N. ; Ryou, J.-H. ; Dupuis, R. D. ; Hong, C.-H. ; Kim, H.</creatorcontrib><description>We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanced up to 56%. Compared to the reference, the
n
-GaN
template grown on IHPDM-embedded structure also showed a reduction in the dislocation density by 57%, leading to an increase in photoluminescence intensity by 82%. The LED fabricated on IHPDM-embedded structure exhibited a reduction in the forward leakage current by one order of magnitude
(
<
1.5
V
)
and an enhancement in the output power by 41%.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3166868</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-07, Vol.95 (1), p.011108-011108-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c283t-5d5448ebced803fab876ff99108742c081719fa406d2f4fa5082a6a9153a63c43</citedby><cites>FETCH-LOGICAL-c283t-5d5448ebced803fab876ff99108742c081719fa406d2f4fa5082a6a9153a63c43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3166868$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4497,27903,27904,76131,76137</link.rule.ids></links><search><creatorcontrib>Lee, J. W.</creatorcontrib><creatorcontrib>Sone, C.</creatorcontrib><creatorcontrib>Park, Y.</creatorcontrib><creatorcontrib>Lee, S.-N.</creatorcontrib><creatorcontrib>Ryou, J.-H.</creatorcontrib><creatorcontrib>Dupuis, R. D.</creatorcontrib><creatorcontrib>Hong, C.-H.</creatorcontrib><creatorcontrib>Kim, H.</creatorcontrib><title>High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures</title><title>Applied physics letters</title><description>We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanced up to 56%. Compared to the reference, the
n
-GaN
template grown on IHPDM-embedded structure also showed a reduction in the dislocation density by 57%, leading to an increase in photoluminescence intensity by 82%. The LED fabricated on IHPDM-embedded structure exhibited a reduction in the forward leakage current by one order of magnitude
(
<
1.5
V
)
and an enhancement in the output power by 41%.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAQhi0EEqEw8A-yMrj44sRxBgZUQYtUwQKzdfFHMTQJst2h_x5XrcTEdLr3fXQnPYTcApsDE_we5hyEkEKekQJY21IOIM9JwRjjVHQNXJKrGL_y2lScFwRXfvNZWue89nbU-3KJr7THaE25zU2idvAp-XFTGj8ZG0uHffAaUwamMYd2a3XKSTlg_M50b43JXUxhp9Mu2HhNLhxuo705zRn5eH56X6zo-m35snhcU11JnmhjmrqWttfWSMbzF9kK57oOmGzrSjMJLXQOayZM5WqHDZMVCuyg4Si4rvmM3B3v6jDFGKxTP8EPGPYKmDq4UaBObjL7cGSj9gmTn8b_4YMg9SdIZUH8F5NYa90</recordid><startdate>20090706</startdate><enddate>20090706</enddate><creator>Lee, J. W.</creator><creator>Sone, C.</creator><creator>Park, Y.</creator><creator>Lee, S.-N.</creator><creator>Ryou, J.-H.</creator><creator>Dupuis, R. D.</creator><creator>Hong, C.-H.</creator><creator>Kim, H.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090706</creationdate><title>High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures</title><author>Lee, J. W. ; Sone, C. ; Park, Y. ; Lee, S.-N. ; Ryou, J.-H. ; Dupuis, R. D. ; Hong, C.-H. ; Kim, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c283t-5d5448ebced803fab876ff99108742c081719fa406d2f4fa5082a6a9153a63c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, J. W.</creatorcontrib><creatorcontrib>Sone, C.</creatorcontrib><creatorcontrib>Park, Y.</creatorcontrib><creatorcontrib>Lee, S.-N.</creatorcontrib><creatorcontrib>Ryou, J.-H.</creatorcontrib><creatorcontrib>Dupuis, R. D.</creatorcontrib><creatorcontrib>Hong, C.-H.</creatorcontrib><creatorcontrib>Kim, H.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, J. W.</au><au>Sone, C.</au><au>Park, Y.</au><au>Lee, S.-N.</au><au>Ryou, J.-H.</au><au>Dupuis, R. D.</au><au>Hong, C.-H.</au><au>Kim, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures</atitle><jtitle>Applied physics letters</jtitle><date>2009-07-06</date><risdate>2009</risdate><volume>95</volume><issue>1</issue><spage>011108</spage><epage>011108-3</epage><pages>011108-011108-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report on the enhanced quantum efficiency of GaN-based light-emitting diodes (LEDs) fabricated on inverted hexagonal pyramid dielectric mask (IHPDM)-embedded structure. The ray-tracing calculation showed that the extraction efficiency of LEDs fabricated on IHPDM-embedded structure could be enhanced up to 56%. Compared to the reference, the
n
-GaN
template grown on IHPDM-embedded structure also showed a reduction in the dislocation density by 57%, leading to an increase in photoluminescence intensity by 82%. The LED fabricated on IHPDM-embedded structure exhibited a reduction in the forward leakage current by one order of magnitude
(
<
1.5
V
)
and an enhancement in the output power by 41%.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3166868</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2009-07, Vol.95 (1), p.011108-011108-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3166868 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T08%3A42%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=High%20efficiency%20GaN-based%20light-emitting%20diodes%20fabricated%20on%20dielectric%20mask-embedded%20structures&rft.jtitle=Applied%20physics%20letters&rft.au=Lee,%20J.%20W.&rft.date=2009-07-06&rft.volume=95&rft.issue=1&rft.spage=011108&rft.epage=011108-3&rft.pages=011108-011108-3&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.3166868&rft_dat=%3Cscitation_cross%3Eapl%3C/scitation_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |