Thermoelectric properties of nanoporous Ge

We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant reduction in the lattice thermal conductivity of np-Ge leads to a 30-fold increase in the thermoelectric figure-of-merit ( Z T ) compared to that of bulk. Detailed comparisons with the recently proposed np-Si show that although the maximum Z T ( Z T max ) of Ge is nine times larger than that of Si in the bulk phase, Z T max of np-Ge is twice as large as that of np-Si due to the similarity in lattice thermal conductivity of the two np systems. Moreover, Z T max is found to occur at a carrier concentration two orders of magnitude lower than that for with np-Si due to the dissimilarities in their electronic structure.