Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device

Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device

We report the relationship of the magnetic properties of the Mn-doped TiO2(Mn:TiO2) thin film on SrTi0.993Ti0.007O3 substrate to the different resistance states of the Ti/Mn:TiO2/Nb:SrTiO3/Ti device. Initially, the device showed paramagnetic behavior without applying voltage. When the device was swi...

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Veröffentlicht in:Applied physics letters 2009-06, Vol.94 (25)
Hauptverfasser: Wu, S. X., Li, X. Y., Xing, X. J., Hu, P., Yu, Y. P., Li, S. W.
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container_issue 25
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container_title Applied physics letters
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creator Wu, S. X.
Li, X. Y.
Xing, X. J.
Hu, P.
Yu, Y. P.
Li, S. W.
description We report the relationship of the magnetic properties of the Mn-doped TiO2(Mn:TiO2) thin film on SrTi0.993Ti0.007O3 substrate to the different resistance states of the Ti/Mn:TiO2/Nb:SrTiO3/Ti device. Initially, the device showed paramagnetic behavior without applying voltage. When the device was switched to low resistance state after applying a positive voltage, robust ferromagnetism was observed. In contrast, when a negative voltage was applied to switch to high resistance state, the device exhibited weak ferromagnetism. This electrically controllable ferromagnetism should be attributed to the tunability of oxygen-vacancy concentration in the Mn:TiO2 film by electric field.
doi_str_mv 10.1063/1.3159740
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3159740</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3159740</sourcerecordid><originalsourceid>FETCH-LOGICAL-c159t-efbecb53d25e1f179f5bbc602a09ae268a22d61f04900cd0eb5708f8a4d79b313</originalsourceid><addsrcrecordid>eNotkE9LwzAYh4MoOKcHv0GuHtq-SZam8SbDfzAdaD2XJH0jkTUtSRns2ztxpx-_y8PDQ8gtg5JBLSpWCia1WsEZWTBQqhCMNedkAQCiqLVkl-Qq55_jlVyIBQkfmEOewx5pjxPGHqNDOno6mO-Ic3B0SuOEaQ6YaYg0jnE_7swcdkjbUL3F-zZsefWZ2gCl1uLdQgmgtqJqAx1wGNPhCN4Hh9fkwptdxpvTLsnX02O7fik22-fX9cOmcEfxuUBv0Vkpei6Reaa0l9a6GrgBbZDXjeG8r5mHlQZwPaCVChrfmFWvtBVMLMndP9elMeeEvptSGEw6dAy6v0Yd606NxC8981g_</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device</title><source>American Institute of Physics (AIP) Journals</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Wu, S. X. ; Li, X. Y. ; Xing, X. J. ; Hu, P. ; Yu, Y. P. ; Li, S. W.</creator><creatorcontrib>Wu, S. X. ; Li, X. Y. ; Xing, X. J. ; Hu, P. ; Yu, Y. P. ; Li, S. W.</creatorcontrib><description>We report the relationship of the magnetic properties of the Mn-doped TiO2(Mn:TiO2) thin film on SrTi0.993Ti0.007O3 substrate to the different resistance states of the Ti/Mn:TiO2/Nb:SrTiO3/Ti device. Initially, the device showed paramagnetic behavior without applying voltage. When the device was switched to low resistance state after applying a positive voltage, robust ferromagnetism was observed. In contrast, when a negative voltage was applied to switch to high resistance state, the device exhibited weak ferromagnetism. This electrically controllable ferromagnetism should be attributed to the tunability of oxygen-vacancy concentration in the Mn:TiO2 film by electric field.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3159740</identifier><language>eng</language><ispartof>Applied physics letters, 2009-06, Vol.94 (25)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c159t-efbecb53d25e1f179f5bbc602a09ae268a22d61f04900cd0eb5708f8a4d79b313</citedby><cites>FETCH-LOGICAL-c159t-efbecb53d25e1f179f5bbc602a09ae268a22d61f04900cd0eb5708f8a4d79b313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Wu, S. X.</creatorcontrib><creatorcontrib>Li, X. Y.</creatorcontrib><creatorcontrib>Xing, X. J.</creatorcontrib><creatorcontrib>Hu, P.</creatorcontrib><creatorcontrib>Yu, Y. P.</creatorcontrib><creatorcontrib>Li, S. W.</creatorcontrib><title>Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device</title><title>Applied physics letters</title><description>We report the relationship of the magnetic properties of the Mn-doped TiO2(Mn:TiO2) thin film on SrTi0.993Ti0.007O3 substrate to the different resistance states of the Ti/Mn:TiO2/Nb:SrTiO3/Ti device. Initially, the device showed paramagnetic behavior without applying voltage. When the device was switched to low resistance state after applying a positive voltage, robust ferromagnetism was observed. In contrast, when a negative voltage was applied to switch to high resistance state, the device exhibited weak ferromagnetism. This electrically controllable ferromagnetism should be attributed to the tunability of oxygen-vacancy concentration in the Mn:TiO2 film by electric field.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNotkE9LwzAYh4MoOKcHv0GuHtq-SZam8SbDfzAdaD2XJH0jkTUtSRns2ztxpx-_y8PDQ8gtg5JBLSpWCia1WsEZWTBQqhCMNedkAQCiqLVkl-Qq55_jlVyIBQkfmEOewx5pjxPGHqNDOno6mO-Ic3B0SuOEaQ6YaYg0jnE_7swcdkjbUL3F-zZsefWZ2gCl1uLdQgmgtqJqAx1wGNPhCN4Hh9fkwptdxpvTLsnX02O7fik22-fX9cOmcEfxuUBv0Vkpei6Reaa0l9a6GrgBbZDXjeG8r5mHlQZwPaCVChrfmFWvtBVMLMndP9elMeeEvptSGEw6dAy6v0Yd606NxC8981g_</recordid><startdate>20090622</startdate><enddate>20090622</enddate><creator>Wu, S. X.</creator><creator>Li, X. Y.</creator><creator>Xing, X. J.</creator><creator>Hu, P.</creator><creator>Yu, Y. P.</creator><creator>Li, S. W.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090622</creationdate><title>Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device</title><author>Wu, S. X. ; Li, X. Y. ; Xing, X. J. ; Hu, P. ; Yu, Y. P. ; Li, S. W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c159t-efbecb53d25e1f179f5bbc602a09ae268a22d61f04900cd0eb5708f8a4d79b313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, S. X.</creatorcontrib><creatorcontrib>Li, X. Y.</creatorcontrib><creatorcontrib>Xing, X. J.</creatorcontrib><creatorcontrib>Hu, P.</creatorcontrib><creatorcontrib>Yu, Y. P.</creatorcontrib><creatorcontrib>Li, S. W.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, S. X.</au><au>Li, X. Y.</au><au>Xing, X. J.</au><au>Hu, P.</au><au>Yu, Y. P.</au><au>Li, S. W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device</atitle><jtitle>Applied physics letters</jtitle><date>2009-06-22</date><risdate>2009</risdate><volume>94</volume><issue>25</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>We report the relationship of the magnetic properties of the Mn-doped TiO2(Mn:TiO2) thin film on SrTi0.993Ti0.007O3 substrate to the different resistance states of the Ti/Mn:TiO2/Nb:SrTiO3/Ti device. Initially, the device showed paramagnetic behavior without applying voltage. When the device was switched to low resistance state after applying a positive voltage, robust ferromagnetism was observed. In contrast, when a negative voltage was applied to switch to high resistance state, the device exhibited weak ferromagnetism. This electrically controllable ferromagnetism should be attributed to the tunability of oxygen-vacancy concentration in the Mn:TiO2 film by electric field.</abstract><doi>10.1063/1.3159740</doi></addata></record>
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title Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T20%3A04%3A25IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Resistive%20dependence%20of%20magnetic%20properties%20in%20nonvolatile%20Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti%20memory%20device&rft.jtitle=Applied%20physics%20letters&rft.au=Wu,%20S.%20X.&rft.date=2009-06-22&rft.volume=94&rft.issue=25&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3159740&rft_dat=%3Ccrossref%3E10_1063_1_3159740%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true