10-nm-thick quinary (AlCrTaTiZr)N film as effective diffusion barrier for Cu interconnects at 900 °C
In this study, an ultrathin quinary nitride film (AlCrTaTiZr)N of only 10 nm thick has been developed as a diffusion barrier layer for Cu interconnects. The (AlCrTaTiZr)N nanocomposite film was constructed of nanocrystallites embedded in an amorphous matrix. At an extremely high temperature of 900 °...
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| Veröffentlicht in: | Applied physics letters 2009-06, Vol.94 (23) |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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