Reduction of native oxides on GaAs during atomic layer growth of Al2O3

The reduction of surface “native” oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the na...

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Veröffentlicht in:	Applied physics letters 2009-06, Vol.94 (22)
Hauptverfasser:	Lee, Hang Dong, Feng, Tian, Yu, Lei, Mastrogiovanni, Daniel, Wan, Alan, Gustafsson, Torgny, Garfunkel, Eric
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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