Reduction of native oxides on GaAs during atomic layer growth of Al2O3

Reduction of native oxides on GaAs during atomic layer growth of Al2O3

The reduction of surface “native” oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the na...

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Veröffentlicht in:Applied physics letters 2009-06, Vol.94 (22)
Hauptverfasser: Lee, Hang Dong, Feng, Tian, Yu, Lei, Mastrogiovanni, Daniel, Wan, Alan, Gustafsson, Torgny, Garfunkel, Eric
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container_issue 22
container_start_page
container_title Applied physics letters
container_volume 94
creator Lee, Hang Dong
Feng, Tian
Yu, Lei
Mastrogiovanni, Daniel
Wan, Alan
Gustafsson, Torgny
Garfunkel, Eric
description The reduction of surface “native” oxides from GaAs substrates following reactions with trimethylaluminum (TMA) precursor is studied using medium energy ion scattering spectroscopy (MEIS) and x-ray photoelectron spectroscopy (XPS). MEIS measurements after one single TMA pulse show that ∼65% of the native oxide is reduced, confirmed by XPS measurement, and a 5 Å thick oxygen-rich aluminum oxide layer is formed. This reduction occurs upon TMA exposure to as-received GaAs wafers.
doi_str_mv 10.1063/1.3148723
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title Reduction of native oxides on GaAs during atomic layer growth of Al2O3
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