Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers
Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance R T (output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem...
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| Veröffentlicht in: | Applied physics letters 2009-05, Vol.94 (20), p.203503-203503-3 |
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| container_title | Applied physics letters |
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| creator | Salloch, D. Wieser, U. Kunze, U. Hackbarth, T. |
| description | Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance
R
T
(output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem and oblique current-injecting leads. Depending on the gate configuration, thermopower contributions arise from nearly pinched stem regions, which either cancel each other or impose upon the ballistic signal with same or opposite polarity. At best, this enhances
R
T
to a maximum value of
470
Ω
close to threshold voltage. |
| doi_str_mv | 10.1063/1.3140439 |
| format | Article |
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R
T
(output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem and oblique current-injecting leads. Depending on the gate configuration, thermopower contributions arise from nearly pinched stem regions, which either cancel each other or impose upon the ballistic signal with same or opposite polarity. At best, this enhances
R
T
to a maximum value of
470
Ω
close to threshold voltage.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3140439</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2009-05, Vol.94 (20), p.203503-203503-3</ispartof><rights>2009 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-60caf3196425d0eb11e7005e3fb0ee6153c9b2344bd10fafa25144c8e1fd5b303</citedby><cites>FETCH-LOGICAL-c319t-60caf3196425d0eb11e7005e3fb0ee6153c9b2344bd10fafa25144c8e1fd5b303</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3140439$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4497,27903,27904,76130,76136</link.rule.ids></links><search><creatorcontrib>Salloch, D.</creatorcontrib><creatorcontrib>Wieser, U.</creatorcontrib><creatorcontrib>Kunze, U.</creatorcontrib><creatorcontrib>Hackbarth, T.</creatorcontrib><title>Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers</title><title>Applied physics letters</title><description>Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance
R
T
(output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem and oblique current-injecting leads. Depending on the gate configuration, thermopower contributions arise from nearly pinched stem regions, which either cancel each other or impose upon the ballistic signal with same or opposite polarity. At best, this enhances
R
T
to a maximum value of
470
Ω
close to threshold voltage.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp1j0FLw0AQhRdRMFYP_oNcPaSdyewmzUWRYqtQ8NB6DrubWbqSJmU3IP33RlrBi6d5Ax-P9wlxjzBFKGiGU0IJkqoLkSCUZUaI80uRAABlRaXwWtzE-Dm-KidKxNN2x2HfH_ovDhl3O91ZblJ2zlvPnT2mvUs3frbxK06NblsfB2_TwHbwznOIt-LK6Tby3flOxMfyZbt4zdbvq7fF8zqzhNWQFWC1G1Mhc9UAG0QuxwlMzgBzgYpsZXKS0jQITjudK5TSzhldowwBTcTDqdeGPsbArj4Ev9fhWCPUP-Y11mfzkX08sdH6QQ--7_6H_-jXv_r0DUKLYEQ</recordid><startdate>20090518</startdate><enddate>20090518</enddate><creator>Salloch, D.</creator><creator>Wieser, U.</creator><creator>Kunze, U.</creator><creator>Hackbarth, T.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20090518</creationdate><title>Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers</title><author>Salloch, D. ; Wieser, U. ; Kunze, U. ; Hackbarth, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-60caf3196425d0eb11e7005e3fb0ee6153c9b2344bd10fafa25144c8e1fd5b303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Salloch, D.</creatorcontrib><creatorcontrib>Wieser, U.</creatorcontrib><creatorcontrib>Kunze, U.</creatorcontrib><creatorcontrib>Hackbarth, T.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Salloch, D.</au><au>Wieser, U.</au><au>Kunze, U.</au><au>Hackbarth, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers</atitle><jtitle>Applied physics letters</jtitle><date>2009-05-18</date><risdate>2009</risdate><volume>94</volume><issue>20</issue><spage>203503</spage><epage>203503-3</epage><pages>203503-203503-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate voltage on the transfer resistance
R
T
(output voltage divided by input current) for different positions of a local gate electrode. The rectifiers are trifurcated quantum wires with straight voltage stem and oblique current-injecting leads. Depending on the gate configuration, thermopower contributions arise from nearly pinched stem regions, which either cancel each other or impose upon the ballistic signal with same or opposite polarity. At best, this enhances
R
T
to a maximum value of
470
Ω
close to threshold voltage.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3140439</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2009-05, Vol.94 (20), p.203503-203503-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3140439 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers |
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