Influence of heterogeneous profiles in carrier density measurements with respect to iron concentration measurements in silicon

Carrier density is a frequently examined parameter for silicon material characterization especially to determine carrier lifetime. Typically integrated values are obtained which ignore nonhomogeneities in the depth dependent carrier profile and result in mean values for lifetime and injection densit...

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Veröffentlicht in:	Journal of applied physics 2009-06, Vol.105 (11), p.114903-114903-6
Hauptverfasser:	Schubert, Martin C., Kerler, Michael J., Warta, Wilhelm
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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