Photoemission study of fully silicided Pd2Si gates with interface modification induced by dopants
Work function shifts for fully silicided (FUSI) Pd2Si gates with BF2 and P predoping, originally observed as the flatband voltage shifts in metal-oxide-semiconductor (MOS) diodes, were also reproducible for backside x-ray photoelectron spectroscopy measurements. The Pd composition ratios of FUSI lay...
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| Veröffentlicht in: | Applied physics letters 2009-05, Vol.94 (19) |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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