Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

LaAlO 3 is a promising candidate of gate dielectric for future very large scale integration devices. In this work, metal-oxide-semiconductor capacitors and transistors with LaAlO3 gate dielectric were fabricated and the electron mobility degradation mechanisms were studied. The LaAlO3 films were dep...

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Veröffentlicht in:	Journal of applied physics 2009-05, Vol.105 (10)
Hauptverfasser:	Chang, Ingram Yin-ku, You, Sheng-wen, Chen, Main-gwo, Juan, Pi-chun, Chen, Chun-heng, Lee, Joseph Ya-min
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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