Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaOx (0.5≤x≤1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs...

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Veröffentlicht in:	Applied physics letters 2009-04, Vol.94 (16)
Hauptverfasser:	Hinkle, C. L., Milojevic, M., Brennan, B., Sonnet, A. M., Aguirre-Tostado, F. S., Hughes, G. J., Vogel, E. M., Wallace, R. M.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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