Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaOx (0.5≤x≤1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs...
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| Veröffentlicht in: | Applied physics letters 2009-04, Vol.94 (16) |
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| container_title | Applied physics letters |
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| creator | Hinkle, C. L. Milojevic, M. Brennan, B. Sonnet, A. M. Aguirre-Tostado, F. S. Hughes, G. J. Vogel, E. M. Wallace, R. M. |
| description | The passivation of interface states remains an important problem for III-V based semiconductor devices. The role of the most stable bound native oxides GaOx (0.5≤x≤1.5) is of particular interest. Using monochromatic x-ray photoelectron spectroscopy in conjunction with controlled GaAs(100) and InGaAs(100) surfaces, a stable suboxide (Ga2O) bond is detected at the interface but does not appear to be detrimental to device characteristics. In contrast, the removal of the Ga 3+ oxidation state (Ga2O3) is shown to result in the reduction of frequency dispersion in capacitors and greatly improved performance in III-V based devices. |
| doi_str_mv | 10.1063/1.3120546 |
| format | Article |
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| ispartof | Applied physics letters, 2009-04, Vol.94 (16) |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning |
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